Class Statistics
What are Chalcogenide Photovoltaic Absorbers?
Chalcogenide photovoltaic absorbers represent a sophisticated class of thin-film semiconductor materials characterized by their exceptional light-harvesting capabilities and tunable optoelectronic properties. At their core, these materials are composed of copper-based chalcogenides, most notably Copper Indium Gallium Selenide (CIGS) and the earth-abundant kesterite Copper Zinc Tin Sulfide (CZTS). The chemistry of these materials relies on the precise arrangement of group I, III, and VI elements—or group I, II, IV, and VI in the case of kesterites—within a crystalline lattice that facilitates efficient photon absorption and charge carrier transport. These materials are highly valued in the solar industry because they possess direct bandgaps that can be chemically tuned to match the solar spectrum, allowing for high-performance energy conversion. CIGS has long been the gold standard for thin-film efficiency, demonstrating the ability to rival traditional silicon-based technologies in laboratory settings. Kesterites have emerged as a critical research focus because they utilize more abundant and less expensive elements, such as zinc and tin, to replace the relatively scarce indium and gallium found in CIGS. While kesterites currently face challenges regarding voltage deficits compared to their CIGS counterparts, their potential for low-cost, large-scale manufacturing makes them a vital area of study for sustainable energy. By optimizing the stoichiometry and grain boundary chemistry of these chalcogenide films, researchers continue to push the boundaries of thin-film photovoltaics, aiming to create flexible, lightweight, and highly efficient solar modules that can be integrated into diverse architectural and portable applications. Their structural versatility ensures that they remain at the forefront of next-generation renewable energy technology.
Top Chalcogenide Photovoltaic Absorbers
Ranked by data richness — literature synthesis coverage, multi-source DFT corroboration, and patent activity.
| Formula | Band Gap | Best EAH (eV/atom) | Stability | DFT Sources | Recipes |
|---|---|---|---|---|---|
| Cu2SnSe3 | 0.02–0.09 eV | 0.0128 | Near hull (likely stable) | 2 | 1 |
| Cu2S3Sn | 0.03 eV | 0.0000 | On hull (stable) | 2 | 0 |
| Cu2SnS3 | 0.03 eV | 0.0000 | On hull (stable) | 2 | 0 |
| Cu2Ga2Se4 | 0.04 eV | 0.0000 | On hull (stable) | 2 | 0 |
| Cu4Se6Sn2 | 0.02–0.09 eV | 0.0128 | Near hull (likely stable) | 2 | 0 |
| Cu2Se3Sn | 0.02–0.09 eV | 0.0128 | Near hull (likely stable) | 1 | 0 |
| Cu4S6Sn2 | 0.03 eV | 0.0000 | On hull (stable) | 2 | 0 |
| InCuS2 | 0.04 eV | 0.0000 | On hull (stable) | 2 | 0 |
| CuInLa2Se5 | 0.56 eV | 0.0060 | Near hull (likely stable) | 1 | 0 |
| CuNa3Se4Sn | 1.14 eV | 0.0167 | Near hull (likely stable) | 1 | 0 |
| GaCuSe2 | 0.04 eV | 0.0000 | On hull (stable) | 2 | 0 |
| Cu6S12Sn3Sr3 | 0.40 eV | 0.0076 | Near hull (likely stable) | 2 | 0 |
| Ga5CuSe8 | 0.39 eV | 0.0018 | Near hull (likely stable) | 2 | 0 |
| In3CuSe5 | 0.23 eV | 0.0017 | Near hull (likely stable) | 2 | 0 |
| In5CuS8 | 0.29 eV | 0.0100 | Near hull (likely stable) | 2 | 0 |
| In5CuSe8 | 0.45 eV | 0.0000 | On hull (stable) | 2 | 0 |
| ZnCu2SnSeS3 | 0.03 eV | 0.0096 | Near hull (likely stable) | 2 | 0 |
| Ba2Cu4Se8Sn2 | 0.45 eV | 0.0000 | On hull (stable) | 2 | 0 |
| Cu4In12K8Se24 | 1.20 eV | 0.0000 | On hull (stable) | 2 | 0 |
| Cu1Ga1Se2 | 0.04 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu16Se24Sn8 | 0.02–0.09 eV | 0.0128 | Near hull (likely stable) | 1 | 0 |
| Cu2Ga2S4 | 0.18–0.71 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu2In2S4 | 0.04 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu8S12Sn4 | 0.03 eV | 0.0000 | On hull (stable) | 1 | 0 |
| CuInS2 | 0.04 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu2S4Sn1Zn1 | 0.09 eV | 0.0000 | On hull (stable) | 1 | 0 |
| ZnCu2GeS4 | 0.37–0.51 eV | 0.0000 | On hull (stable) | 1 | 0 |
| ZnCu2SnS4 | 0.09 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu2Ge1S4Zn1 | 0.37–0.51 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu4Ge2S8Zn2 | 0.37–0.51 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu4In4S8 | 0.04 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu4S8Si2Zn2 | 1.28–1.61 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu4Se8Si2Zn2 | 0.40–0.55 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu54In54S108 | 0.04 eV | 0.0000 | On hull (stable) | 1 | 0 |
| ZnCu2SiS4 | 1.28–1.61 eV | 0.0000 | On hull (stable) | 1 | 0 |
| ZnCu2SiSe4 | 0.40–0.55 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Al2Cu2Se8Sn2 | 0.55 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu4Ga4Se8 | 0.04 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu4S8Sn2Zn2 | 0.09 eV | 0.0000 | On hull (stable) | 1 | 0 |
| FeCu2Sn3S8 | 0.65 eV | 0.0125 | Near hull (likely stable) | 1 | 0 |
| GaCuS2 | 0.18–0.71 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Zn2GaCuSe4 | 0.45 eV | 0.0042 | Near hull (likely stable) | 1 | 0 |
| Cu2Dy6S14Sn2 | 1.49 eV | 0.0092 | Near hull (likely stable) | 1 | 0 |
| Cu2In2Se8Sn2 | 0.36 eV | 0.0052 | Near hull (likely stable) | 1 | 0 |
| Cu2La6S14Sn2 | 1.87 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu2Nd6S14Sn2 | 1.76 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu2Pr6S14Sn2 | 1.78 eV | 0.0000 | On hull (stable) | 1 | 0 |
| Cu2S14Sn2Y6 | 1.49 eV | 0.0134 | Near hull (likely stable) | 1 | 0 |
| Cu2S4SnTl2 | 0.22 eV | 0.0283 | Metastable | 1 | 0 |
| Cu3In3Se8Si | 0.63 eV | 0.0138 | Near hull (likely stable) | 1 | 0 |
Frequently Asked Questions
How many chalcogenide photovoltaic absorbers are in the database?
771 chalcogenide photovoltaic absorbers are tracked, of which 32 have multi-source DFT validation and 2 have documented synthesis routes.
What is the most data-rich chalcogenide photovoltaic absorber?
Which chalcogenide photovoltaic absorber has the widest band gap?
What distinguishes CIGS from kesterite CZTS?
Why is bandgap tunability important for these materials?
Are chalcogenide photovoltaics suitable for flexible applications?
What is the primary challenge currently facing kesterite solar cells?
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