CuInS2

CuInS2 has a DFT band gap of 0.04 eV across 6 reported structures in 3 space groups; its reference structure is tetragonal (I-42d (No. 122)). Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for CuInS2, aggregated across 2 databases.

Band Gap

0.04 eV
Range across DFT structures · ground state: metal

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
1 DFT source

Structures

6
2 databases, 3 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of CuInS2. Tight agreement means computed properties can be trusted without re-running calculations.

Only 1 independent DFT source (materials_project) reports a hull energy for CuInS2, so cross-source agreement can't be assessed yet.

Crystallography

Reported Structures

Lowest-energy structures reported for CuInS2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
I-42d (No. 122)tetragonal0.000.0000-12.9984.75
P3m1 (No. 156)trigonal0.000.0741-12.9244.64
R3m (No. 160)trigonal0.040.0821-12.9165.02
I-42d (No. 122)tetragonal———4.75
I-42d (No. 122)tetragonal———4.78
I-42d (No. 122)tetragonal———4.74
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting CuInS2.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Intellectual Property

Patent Landscape

3 patents reference CuInS2 or close compositional variants.

PatentTitleAssigneeGranted
4687881Solar cells based on CuInS.sub.2——
4180625Semiconductor liquid junction photocell using a CuInS.sub.2 electrode——
8053029Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricate——
Reference

Frequently Asked Questions

Common questions about CuInS2, answered from cross-validated data.

What is the band gap of CuInS2?

CuInS2 has a DFT-computed band gap of 0.04 eV across 6 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.

More questions
Is CuInS2 a metal, semiconductor, or insulator?
DFT predicts a near-zero band gap ((semi)metallic). Standard DFT underestimates gaps, so the real material may be a semiconductor.
Is CuInS2 thermodynamically stable?
Yes — CuInS2 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of CuInS2?
The reference structure of CuInS2 is tetragonal symmetry, space group I-42d (No. 122).
What is the density of CuInS2?
The computed density of the ground-state structure of CuInS2 is 4.75 g/cm³.
How many polymorphs of CuInS2 are known?
6 structures of CuInS2 are reported across 2 databases, spanning 3 distinct space groups.
How is CuInS2 synthesized?
Literature-reported routes for CuInS2 include solid state (4 procedures documented).
What elements does CuInS2 contain?
CuInS2 contains Cu, In, and S (3 elements).
Where does the data for CuInS2 come from?
CuInS2 data is cross-referenced from materials_project, cod.
Explore

Related Compounds

Other Chalcogenide Photovoltaic Absorbers in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)

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