Cu6S12Sn3Sr3

Cu6S12Sn3Sr3 is a semiconducting quaternary chalcogenide material being researched for its potential use in advanced photovoltaic solar energy conversion.

Crystal structure of Cu6S12Sn3Sr3 (trigonal, P3221 (No. 154))
Ground-state structure · Materials Project
Overview

About Cu6S12Sn3Sr3

Cu6S12Sn3Sr3 is a complex quaternary chalcogenide semiconductor that belongs to the class of materials investigated for thin-film photovoltaic applications. Its composition, incorporating copper, sulfur, tin, and strontium, places it in a unique structural category of absorbers designed for efficient light harvesting.

This compound is noted for its near-hull thermodynamic stability, suggesting it is a viable candidate for experimental synthesis. As a semiconducting material, it is studied for its ability to facilitate charge carrier generation, making it a subject of interest for researchers optimizing sustainable energy conversion technologies.

At a glance

Key Properties

Cross-validated computational properties for Cu6S12Sn3Sr3, aggregated across 3 databases.

Band Gap

0.40 eV
Range across DFT structures

Energy Above Hull

0.008 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

5
3 databases, 2 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Cu6S12Sn3Sr3, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P3221 (No. 154)trigonal0.400.0076-4.8314.23
P3121 (No. 152)trigonal0.400.0076-4.8314.23
4.22
P3221 (No. 154)
P3121 (No. 152)
Uses

Applications

Where Cu6S12Sn3Sr3 is used.

Photovoltaic solar cellsThin-film semiconductor researchOptoelectronic devices
Reference

Frequently Asked Questions

Common questions about Cu6S12Sn3Sr3, answered from cross-validated data.

What is Cu6S12Sn3Sr3?

Cu6S12Sn3Sr3 is a semiconducting quaternary chalcogenide material being researched for its potential use in advanced photovoltaic solar energy conversion.

More questions
What is Cu6S12Sn3Sr3 used for?
Cu6S12Sn3Sr3 is used in photovoltaic solar cells, thin-film semiconductor research, and optoelectronic devices.
What is the band gap of Cu6S12Sn3Sr3?
Cu6S12Sn3Sr3 has a DFT-computed band gap of 0.40 eV across 5 reported structures.
Is Cu6S12Sn3Sr3 a metal, semiconductor, or insulator?
With a band gap up to 0.40 eV it is a semiconductor.
Is Cu6S12Sn3Sr3 thermodynamically stable?
Cu6S12Sn3Sr3 has a lowest energy above hull of 0.008 eV/atom (near hull (likely stable)).
What is the crystal structure of Cu6S12Sn3Sr3?
The lowest-energy reported polymorph of Cu6S12Sn3Sr3 is trigonal symmetry, space group P3221 (No. 154).
What is the density of Cu6S12Sn3Sr3?
The computed density of the ground-state structure of Cu6S12Sn3Sr3 is 4.23 g/cm³.
How many polymorphs of Cu6S12Sn3Sr3 are known?
5 structures of Cu6S12Sn3Sr3 are reported across 3 databases, spanning 2 distinct space groups.
What elements does Cu6S12Sn3Sr3 contain?
Cu6S12Sn3Sr3 contains Cu, S, Sn, and Sr (4 elements).
Where does the data for Cu6S12Sn3Sr3 come from?
Cu6S12Sn3Sr3 data is cross-referenced from materials_project, omat24, aflow.
Comparison

How It Compares

Within the chalcogenide photovoltaic absorbers class.

Within the diverse family of chalcogenide photovoltaic absorbers, Cu6S12Sn3Sr3 occupies a distinct niche by incorporating strontium alongside the more commonly studied copper-tin-sulfide frameworks like Cu2SnS3. While many of its siblings are binary or simple ternary systems, this compound represents a more complex structural arrangement that offers a different approach to tuning optoelectronic properties compared to standard absorbers like Cu2SnSe3.

Explore

Related Compounds

Other Chalcogenide Photovoltaic Absorbers in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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