Cu4In4S8

Cu4In4S8 has a DFT band gap of 0.04 eV across 5 reported structures in 3 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Cu4In4S8, aggregated across 2 databases.

Band Gap

0.04 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

5
2 databases, 3 space groups
Reference

Frequently Asked Questions

Common questions about Cu4In4S8, answered from cross-validated data.

What is the band gap of Cu4In4S8?

Cu4In4S8 has a DFT-computed band gap of 0.04 eV across 5 reported structures.

More questions
Is Cu4In4S8 a metal, semiconductor, or insulator?
With a near-zero band gap it behaves as a (semi)metal.
Is Cu4In4S8 thermodynamically stable?
Yes — Cu4In4S8 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Cu4In4S8 are known?
5 structures of Cu4In4S8 are reported across 2 databases, spanning 3 distinct space groups.
What elements does Cu4In4S8 contain?
Cu4In4S8 contains Cu, In, and S (3 elements).
Where does the data for Cu4In4S8 come from?
Cu4In4S8 data is cross-referenced from latticegraph.
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Related Compounds

Other Chalcogenide Photovoltaic Absorbers in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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