Semiconductors & Electronics

II-VI Semiconductors

Zinc and cadmium chalcogenides (ZnS, CdTe, ZnSe) with band gaps spanning the visible spectrum — the basis of thin-film photovoltaics, quantum dots, and scintillation detectors.

At a glance

Class Statistics

Compounds Tracked
360
Multi-Source DFT
92
With Synthesis Routes
3
Avg. Agreement
0.83 / 1.00
Overview

What are II-VI Semiconductors?

II-VI semiconductors are a class of compound materials formed by combining elements from group 12 (formerly group IIB) of the periodic table, such as zinc, cadmium, or mercury, with elements from group 16 (the chalcogens), such as sulfur, selenium, or tellurium. These materials are characterized by their direct band gaps, which typically span the visible to ultraviolet regions of the electromagnetic spectrum. This unique electronic structure makes them exceptionally efficient at absorbing and emitting light, positioning them as fundamental components in modern optoelectronics. Chemically, these compounds often crystallize in either zinc-blende or wurtzite structures, providing a versatile platform for band-gap engineering through alloying. The importance of II-VI semiconductors lies in their role as the backbone for high-performance thin-film photovoltaics, where they enable cost-effective solar energy conversion. Furthermore, their ability to be synthesized as nanocrystals, commonly referred to as quantum dots, has revolutionized biological imaging and display technologies due to their size-tunable fluorescence. They are also essential in the development of high-energy radiation detectors and scintillation materials. Notable members of this class include cadmium telluride (CdTe), widely utilized in solar cells; zinc selenide (ZnSe), prized for its transparency in the infrared; and zinc sulfide (ZnS), a classic phosphor material. As research continues to evolve, the integration of II-VI materials into flexible electronics and advanced sensing arrays remains a primary focus, highlighting their enduring relevance in materials science and engineering.

Members

Top II-VI Semiconductors

Ranked by data richness — literature synthesis coverage, multi-source DFT corroboration, and patent activity.

FormulaBand GapBest EAH (eV/atom)StabilityDFT SourcesRecipes
CdS0.28–1.52 eV0.0000On hull (stable)25
CdTe0.02–0.62 eV0.0000On hull (stable)31
CdSe0.51–0.57 eV0.0000On hull (stable)30
Cd2Se20.51–0.57 eV0.0000On hull (stable)30
Cd2Te20.02–0.62 eV0.0000On hull (stable)30
S2Zn20.11–2.14 eV0.0000On hull (stable)30
ZnS0.11–2.09 eV0.0000On hull (stable)21
CdSe20.61 eV0.0000On hull (stable)30
Se2Zn21.17–1.97 eV0.0000On hull (stable)30
Te3Zn30.29–1.10 eV0.0000On hull (stable)30
Se3Zn31.17–1.97 eV0.0000On hull (stable)30
S12Zn120.11–2.09 eV0.0000On hull (stable)20
S14Zn140.11–2.09 eV0.0000On hull (stable)20
S18Zn180.11–2.09 eV0.0000On hull (stable)20
S3Zn30.11–2.09 eV0.0000On hull (stable)20
S4Zn40.11–2.09 eV0.0000On hull (stable)20
S8Zn80.11–2.09 eV0.0000On hull (stable)20
Te2Zn20.29–1.10 eV0.0000On hull (stable)20
ZnSe1.17–1.97 eV0.0000On hull (stable)20
ZnTe0.29–1.10 eV0.0000On hull (stable)20
CdS21.16 eV0.0508Metastable20
ZnS21.42 eV0.1454Above hull20
ZnSe20.73 eV0.0000On hull (stable)20
Cd2S20.28–1.52 eV0.0000On hull (stable)20
Cd3Te30.02–0.62 eV0.0000On hull (stable)20
Cd2S0.62 eV0.2224Above hull20
Cd1Te10.02–0.62 eV0.0000On hull (stable)10
S108Zn1080.11–2.09 eV0.0000On hull (stable)10
S10Zn100.11–2.09 eV0.0000On hull (stable)10
S16Zn160.11–2.09 eV0.0000On hull (stable)10
S1Zn10.11–2.09 eV0.0000On hull (stable)10
S20Zn200.11–2.09 eV0.0000On hull (stable)10
S22Zn220.11–2.09 eV0.0000On hull (stable)10
S24Zn240.11–2.09 eV0.0000On hull (stable)10
S26Zn260.11–2.09 eV0.0000On hull (stable)10
S28Zn280.11–2.09 eV0.0000On hull (stable)10
S36Zn360.11–2.09 eV0.0000On hull (stable)10
S5Zn50.11–2.09 eV0.0000On hull (stable)10
S6Zn60.11–2.09 eV0.0000On hull (stable)10
S7Zn70.11–2.09 eV0.0000On hull (stable)10
S96Zn960.11–2.09 eV0.0000On hull (stable)10
Te1Zn10.29–1.10 eV0.0000On hull (stable)10
Te4Zn40.29–1.33 eV0.0000On hull (stable)20
Cd3Se30.51–0.57 eV0.0000On hull (stable)20
Te6Zn60.29–1.10 eV0.0000On hull (stable)20
TeZn0.29–1.10 eV0.0000On hull (stable)10
Se1Zn11.17–1.97 eV0.0000On hull (stable)10
Se6Zn61.17–1.97 eV0.0000On hull (stable)20
Se4Zn41.17–1.97 eV0.0000On hull (stable)20
SeZn1.17–1.97 eV0.0000On hull (stable)10
Reference

Frequently Asked Questions

How many ii-vi semiconductors are in the database?

360 ii-vi semiconductors are tracked, of which 92 have multi-source DFT validation and 3 have documented synthesis routes.

More questions
What is the most data-rich ii-vi semiconductor?
CdS is the most thoroughly characterized, with 117 reported structures.
Which ii-vi semiconductor has the widest band gap?
Among the top compounds, S2Zn2 has the widest reported DFT band gap (2.14 eV).
What distinguishes II-VI semiconductors from III-V semiconductors?
The primary distinction lies in their constituent elements and bonding characteristics. II-VI materials are composed of group 12 and group 16 elements, generally exhibiting more ionic character in their bonding compared to the more covalent III-V compounds, which are formed from group 13 and group 15 elements.
Why are II-VI semiconductors significant for solar energy?
They are significant because many II-VI compounds possess optimal direct band gaps that allow for efficient absorption of the solar spectrum, enabling the production of thin-film solar cells that are lightweight, flexible, and potentially cheaper to manufacture than traditional silicon-based panels.
What are quantum dots in the context of II-VI materials?
Quantum dots are nanoscale particles of II-VI semiconductors that exhibit quantum confinement effects. This means their optical and electronic properties, such as the color of light they emit, can be precisely controlled by changing the size of the particle rather than its chemical composition.
Are there environmental concerns associated with II-VI semiconductors?
Yes, some II-VI materials contain heavy metals like cadmium, which require careful handling and specialized recycling protocols during the manufacturing and disposal phases to prevent environmental contamination and ensure regulatory compliance.
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