Cu3In3Se8Si
Cu3In3Se8Si has a DFT band gap of 0.63 eV across 3 reported structures in 1 space group; its lowest-energy polymorph is tetragonal (P-4 (No. 81)). Cross-validated across 2 computational databases.
At a glance
Key Properties
Cross-validated computational properties for Cu3In3Se8Si, aggregated across 2 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.63 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.014 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Near hull (likely stable)
1 DFT source
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
3
2 databases, 1 space group
Crystallography
Reported Structures
Lowest-energy structures reported for Cu3In3Se8Si, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-4 (No. 81) | tetragonal | 0.63 | 0.0138 | -4.271 | 5.17 |
| — | — | — | — | — | 5.18 |
| — | — | — | — | — | 5.18 |
Reference
Frequently Asked Questions
Common questions about Cu3In3Se8Si, answered from cross-validated data.
What is the band gap of Cu3In3Se8Si?
Cu3In3Se8Si has a DFT-computed band gap of 0.63 eV across 3 reported structures.
More questions
Is Cu3In3Se8Si a metal, semiconductor, or insulator?
With a band gap up to 0.63 eV it is a semiconductor.
Is Cu3In3Se8Si thermodynamically stable?
Cu3In3Se8Si has a lowest energy above hull of 0.014 eV/atom (near hull (likely stable)).
What is the crystal structure of Cu3In3Se8Si?
The lowest-energy reported polymorph of Cu3In3Se8Si is tetragonal symmetry, space group P-4 (No. 81).
What is the density of Cu3In3Se8Si?
The computed density of the ground-state structure of Cu3In3Se8Si is 5.17 g/cm³.
How many polymorphs of Cu3In3Se8Si are known?
3 structures of Cu3In3Se8Si are reported across 2 databases, spanning 1 distinct space group.
What elements does Cu3In3Se8Si contain?
Cu3In3Se8Si contains Cu, In, Se, and Si (4 elements).
Where does the data for Cu3In3Se8Si come from?
Cu3In3Se8Si data is cross-referenced from materials_project, omat24.
Explore
Related Compounds
Other Chalcogenide Photovoltaic Absorbers in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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