InN
Indium nitride · InN
Indium nitride is a semiconductor material composed of indium and nitrogen. It is primarily utilized in the development of advanced optoelectronic devices due to its unique electronic properties.
Overview
Key Properties
Cross-validated computational properties for Indium nitride, aggregated across 5 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
1.15 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
3 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
236
5 databases, 42 space groups
Validation
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of InN. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
1.00 / 1.00
Trust tier: high
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
0.000 eV
EAH spread across sources
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
3
jarvis, materials_project, nomad
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
All match
Crystallography
Reported Structures
Lowest-energy structures reported for InN, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P63mc (No. 186) | hexagonal | 0.00 | 0.0000 | -15.971 | 6.84 |
| F-43m (No. 216) | cubic | 0.00 | 0.0133 | -15.958 | 6.82 |
| Fm-3m (No. 225) | cubic | 0.00 | 0.2108 | -15.761 | 8.19 |
| Fm-3m (No. 225) | — | 1.15 | — | — | — |
| Cmcm (No. 63) | Orthorhombic | — | — | — | 6.12 |
| C2/c (No. 15) | Monoclinic | — | — | — | 6.31 |
| P42/mmc (No. 131) | Tetragonal | — | — | — | 8.08 |
| P42/mmc (No. 131) | Tetragonal | — | — | — | 6.50 |
| P42/mmc (No. 131) | Tetragonal | — | — | — | 6.52 |
| P2/m (No. 10) | Monoclinic | — | — | — | 9.22 |
| Pmma (No. 51) | Orthorhombic | — | — | — | 6.42 |
| Pmma (No. 51) | Orthorhombic | — | — | — | 7.74 |
Uses
Applications
Where Indium nitride is used.
High-speed transistorsSolar cellsLight-emitting diodesLaser diodesPhotodetectors
Reference
Frequently Asked Questions
Common questions about Indium nitride, answered from cross-validated data.
What is InN?
Indium nitride is a semiconductor material composed of indium and nitrogen. It is primarily utilized in the development of advanced optoelectronic devices due to its unique electronic properties.
More questions
What is InN used for?
Indium nitride (InN) is used in high-speed transistors, solar cells, light-emitting diodes, laser diodes, and photodetectors.
What is the band gap of InN?
Indium nitride (InN) has a DFT-computed band gap of 1.15 eV across 236 reported structures.
Is InN a metal, semiconductor, or insulator?
With a band gap up to 1.15 eV it is a semiconductor.
Is InN thermodynamically stable?
Yes — Indium nitride (InN) sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of InN?
The lowest-energy reported polymorph of Indium nitride (InN) is hexagonal symmetry, space group P63mc (No. 186).
What is the density of InN?
The computed density of the ground-state structure of Indium nitride (InN) is 6.84 g/cm³.
How many polymorphs of InN are known?
236 structures of InN are reported across 5 databases, spanning 42 distinct space groups.
What elements does InN contain?
Indium nitride (InN) contains In and N (2 elements).
Where does the data for InN come from?
InN data is cross-referenced from materials_project, nomad, mpaloe.
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Related Compounds
Other III-V Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
- mpaloe — Data from mpaloe.
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