A catalogue of invention candidates, ranked by our market estimate and the depth of computational evidence.

PFAS-destruction selector with triple-verified fluoride mass balance

Routes short-chain PFAS to selective ion exchange and destruction, with the fluoride mass balance checked three ways. Designed and simulated; not yet run on real water.

municipal waterDetails →

Heat-flux-map-registered zone-modulated thermal interface material for AI accelerator packaging

A single continuous TIM body with filler concentration tuned to the die heat-flux map. A 2-D finite-difference model predicts 10–25 K lower hotspot peak temperature at the same total filler mass; not yet measured.

AI accelerator packagingDetails →

Integrated all-solid-state battery cell stack — ordered multilayer with endpoint qualification

Single all-solid-state battery architecture uniting an anode-side oxide interlayer, a buffered halide/sulfide separator and an ordered cathode, specified against cell endpoint targets that have not yet been tested.

Preliminary screen onlyCrP

Chromium-phosphide catalyst for low-cost, carbon-support-free hydrogen production

Single-phase CrP electrode with computed near-optimal hydrogen binding (two ML potentials agree), proposed as a platinum-group-metal-free hydrogen-evolution cathode. Activity has not been measured.

PFAS-free dielectric immersion-cooling system for AI accelerators and data centers

Closed-loop immersion coolant system specified for dielectric retention, a corrosion-inhibitor package and 500-hour reuse, with no fluorinated fluids. Design specification; not yet tested.

AI/data-center thermal managementDetails →

Integrated glass-core advanced-packaging substrate stack

Single ordered glass-core article spanning thermal liner, Cu barrier, dielectric, cap and passive layers, with 16 package-reliability endpoints defined for qualification (not yet run).

Zone-modulated thermal interface material article with heat-flux-registered filler distribution

A standalone pre-formed TIM sheet or film with spatially varying filler concentration registered to a die heat-flux map, enabling merchant TIM suppliers to sell directly to OSATs independent of the package builder.

merchant TIM supplyDetails →

PFAS-free semiconductor fluid purification and PAT-gated release platform

Fluid-agnostic multi-module purification with sensor-gated release, designed to bring PFAS-free candidate fluids to electronics-grade release thresholds (not yet demonstrated).

semiconductor manufacturingDetails →

★ FlagshipChecked by 3 ML potentials

Glass-core packaging stack with aluminum borate liner, tungsten boride barrier, and chlorine-retaining RDL dielectric

Integrated glass-core substrate stack combining a conformal AlBO3 liner, a crystalline WB2 copper diffusion barrier, and a retained-chlorine amorphous dielectric for advanced semiconductor packaging.

Defined carve-outAlBO3 / WB2 / AlOxCly

Preliminary screen onlyB2W / WBx (x~1.5-2.5)

Tungsten boride copper diffusion barrier on alumina-borate liner for glass-core vias

Tungsten boride copper barrier on an alumina-borate adhesion liner, with a computed copper migration barrier of about 3 eV, proposed to block copper diffusion at thinner films than TaN in high-aspect-ratio through-glass vias.

Blocking patents listed11B-As (cBAs)

Isotope-enriched cubic boron arsenide particulate thermal interface material

Bimodal boron-11-enriched cubic boron arsenide particles in a polysiloxane matrix; an effective-medium estimate gives 30–46 W/m·K composite thermal conductivity (not yet measured).

premium AI accelerator TIMDetails →

Preliminary screen onlyLi3InCl6 | Li3PO4 | Li6PS5Cl

Oxide-buffered halide/sulfide trilayer for solid-state batteries

Li3InCl6 / oxide-buffer / argyrodite three-layer stack designed to stop halide–sulfide cross-diffusion. Acceptance target: no more than 25% interfacial-resistance growth over 500 h; not yet tested.

Automated PFAS treatment controller with tamper-evident audit ledger and discharge interlock

Hardware-interlocked controller that applies the PFAS treatment selection rules, logs results on a hash-chained tamper-evident ledger, and physically blocks discharge below the verified closure threshold.

industrial process controlDetails →

Integrated high-power package with matched TIM-1, TIM-2, and lid-attach thermal stack

One ordered package architecture combining zone-modulated TIM-1, low-bond-line TIM-2, and inorganic lid-attach layers, covering the full thermal path for AI accelerators and HBM modules.

AI accelerator packagingDetails →

★ FlagshipChecked by 4 ML potentials

Cation-ordered Li2MgMn3O8 spinel cathode for high-voltage solid-state batteries

Ordered Mg-Mn spinel cathode with all-Mn4+ redox, designed for a 2.0–4.95 V window with suppressed oxygen evolution; capacity target not yet tested. IP status is a preliminary screen, not a freedom-to-operate opinion.

Preliminary screen onlyLi2MgMn3O8

Blocking patents listedBa2HfO4

Barium hafnate Ruddlesden-Popper high-permittivity dielectric for MIM capacitors

Layered Ba2HfO4 with a database-computed permittivity of ~53.5, proposed for high-density MIM capacitors in DRAM and advanced packaging.

semiconductor memoryDetails →

★ FlagshipChecked by 4 ML potentials

Multi-engine phonon-consensus screening method for rare-earth ternary silicide superconductor candidates

Four-engine phonon-stability consensus plus a preliminary patent prescreen, used as a selection method over a broad known genus.

★ FlagshipChecked by 1 ML potential

Rare-earth disilicate dielectric platform for glass-core and redistribution-layer applications

Y2Si2O7 and Lu2Si2O7 with computed (Materials Project DFPT) static permittivity of about 9–10, proposed as dielectrics for glass-core and redistribution-layer packaging.

Blocking patents listedY2Si2O7

Preliminary screen onlyFe0.5Co0.5P

Ordered iron-cobalt phosphide cathode for PGM-free hydrogen electrolysis

Single-phase FeCoP with the tightest dual-model hydrogen-binding agreement in the family, offering a PGM-free alternative to carbon-supported phosphides.

Preliminary screen onlyCaHfO3

Calcium hafnate and calcium zirconate high-permittivity dielectrics for advanced memory packaging

Distorted-perovskite CaHfO3 and CaZrO3, stable under two ML potentials, proposed as high-k dielectrics for MIM capacitors in HBM4 and DRAM packaging. IP status is a preliminary screen.

HBM4/DRAM memoryDetails →

Blocking patents listedCa2Hf7O16

High-atomic-number hafnate, tantalate, and oxyfluoride scintillator hosts for gamma detection

Ca2Hf7O16 and Rb2Hf3OF12 proposed as dense, high-atomic-number scintillator hosts for gamma detection. Light yield has not been measured.

Preliminary screen onlyYAl3B4O12

Yttrium aluminoborate (YAl3B4O12) huntite-phase dielectric for high-bandwidth-memory packaging

Huntite-structure YAl3B4O12 proposed as a high-temperature dielectric for HBM redistribution layers, which need permittivity in the 5–9 range. Its glass-transition temperature and permittivity have not been measured.

Preliminary screen onlyWP2

Tungsten diphosphide catalyst for hydrogen evolution via CVT or molten-salt synthesis

Beta-phase WP2 grown by chemical vapour transport or flux, proposed as a support-free, platinum-group-metal-free hydrogen-evolution cathode. Hydrogen binding is computed; durability has not been tested.

Blocking patents listedMoP / CoP / Co2P / FeP / WP

Transition-metal phosphide cathode catalyst for green hydrogen electrolyzers

MoP, CoP, Co2P, FeP and WP phosphide catalysts in membrane electrode assemblies, with computed near-optimal hydrogen binding, proposed as platinum-free cathodes for PEM, AEM and alkaline electrolyzers.

Closed-loop nitrogen-blanketed vapor-cleaning apparatus for PFAS-free solvents

Oxygen- and flammability-interlocked enclosed vapour cleaner for moderately flammable PFAS-free fluids. Design targets: at least 90% solvent recovery and 50 reuse cycles.

precision parts cleaningDetails →

Preliminary screen onlyAlF3

Capped aluminum fluoride low-k dielectric nanolaminate for redistribution layers

Wide-bandgap AlF3 redistribution-layer dielectric (computed static permittivity ~4.8), deposited as a capped nanolaminate intended to limit fluorine migration. Dielectric loss has not been measured.

HBM RDLDetails →

Blocking patents listedDTBC-PS-DVB

Sterically hindered catecholate resin for selective germanium recovery from zinc-refinery residue

3,5-di-tert-butylcatechol resin with predicted Ge/Zn separation factors of 500–5,000 at pH 1–3 (quantum-chemistry estimate), proposed for direct germanium extraction from acidic zinc-smelter waste streams.

Tungsten monophosphide catalyst for hydrogen evolution — dual-facet HER activity

Single-phase WP has two computed crystal faces for hydrogen evolution, only the first predicted near-optimal (neither measured), rounding out a PGM-free phosphide cathode platform.

Defined carve-outWP

PFAS-free fume suppressant for hexavalent-chromium plating baths

Oxidation-resistant alpha-hydrogen-free sulfonate package is designed to suppress chrome-plating mist with near-zero organofluorine content; parity with fluorotelomer suppressants untested.

metal finishing / hard chrome platingDetails →

Radiation-detection device integrating a novel scintillator host with a photodetector for PET, CT, and particle physics

Detector system combining the disclosed scintillator hosts with PMT, SiPM, or APD photodetectors, covering PET/SPECT rings, X-ray CT arrays, calorimeter cells, and well-logging tools.

medical imagingDetails →

Preliminary screen onlyBa3Hf2O7

Ruddlesden-Popper barium hafnate high-k dielectric for package-integrated MIM capacitors

Layered Ba3Hf2O7 hafnate with a computed dielectric constant of ~32 and a computed 3.7 eV bandgap, proposed for embedded MIM and decoupling capacitors.

Blocking patents listedh-BN + AlN (epoxy/vitrimer matrix)

Low-bond-line aligned hexagonal boron nitride and aluminum nitride TIM with pump-out resistance

Spacer-controlled 25–50 µm bond-line TIM with aligned ceramic fillers and a dynamic crosslinker. Design target: under 5% thermal-resistance drift after 1,000 thermal cycles; not yet tested.

cold-plate AI accelerator TIM-2Details →

Li2HfO3 hafnate cathode coating for sulfide solid-state electrolytes

Hafnium-only lithium oxide ALD coating (5–100 nm, 270–330 °C) on high-voltage cathode particles in direct contact with argyrodite sulfide electrolytes.

Defined carve-outLi2HfO3

Method of producing hydrogen using a support-free phosphide cathode

Electrolyzer operation method covering acid, alkaline, and neutral electrolytes with a support-free transition-metal phosphide cathode at commercial current densities.

Blocking patents listedCrP / Cr(1-x)MxP

Chromium phosphide catalyst for noble-metal-free hydrogen evolution

CrP and cobalt- or nickel-doped variants on nitrogen-doped carbon with a computed hydrogen adsorption free energy near −0.09 eV, proposed as platinum-free electrolyzer cathodes.

Preliminary screen onlyBa2ScTaO6

Double-perovskite barium scandium tantalate high-k dielectric for package MIM capacitors

Ordered Ba2ScTaO6 double perovskite with a database-computed dielectric constant of ~47, stable under two ML potentials, proposed as a high-capacitance-density MIM capacitor dielectric.

Ordered fabrication method for integrated glass-core advanced-packaging substrates

A process claim covering the ordered deposition sequence — thermal liner, Cu barrier, gradient sublayer, copper fill, cap, dielectric, and high-k passive — for manufacturing the integrated glass-core package stack.

semiconductor packaging fabDetails →

Preliminary screen only10B-N / 11B-N (c-BN)

Isotope-enriched cubic boron nitride particulate filler for electrically insulating thermal interfaces

Isotope-enriched (10B or 11B) cubic boron nitride particles as electrically insulating thermal-interface fillers. The very high thermal conductivity is a published single-crystal measurement (Chen et al., Science, 2020), not a filler result.

premium dielectric-isolating TIMDetails →

Blocking patents listedV2O5-P2O5-GeO2 (+ rutile GeO2 filler)

Lead-free vanadium-phosphate-germanate glass-binder TIM and lid-attach for glass-core packaging

A V2O5-P2O5-GeO2 inorganic glass binder with rutile germanium dioxide filler reflowing at 270–310 °C, proposed as a pump-out-resistant, CTE-matched bondline for glass-core packaging.

glass-core advanced packagingDetails →

Preliminary screen onlyAlBO3/BaWO4/LiBO2/BO4P

Bandgap-graded borate and oxynitride multilayer dielectric stack for sub-2-micron packaging

A sequenced AlBO3/BaWO4/LiBO2/borophosphate dielectric ladder with bandgap increasing away from conductors, designed to suppress carrier injection for sub-2-micron redistribution-layer pitch.

Blocking patents listedMgSiN2

Magnesium silicon nitride particulate thermal interface material — beryllium-free architecture

Discrete surface-treated MgSiN2 particles in a polymer matrix, proposed as a beryllium-free nitride filler for thermal interface materials.

non-Be-fab environmentsDetails →

Preliminary screen onlyLi3InCl6 | Li3PO4/LiNbO3/LiTaO3 (0.2-3 um) | argyrodite

Process for assembling a buffer-protected halide/sulfide trilayer

Manufacturing method for the protected halide/sulfide stack using a 0.2–3 µm oxide buffer sublayer, qualified against a target of no more than 25% interfacial-resistance growth over 500 h (not yet tested).

Preliminary screen onlyLi3InCl6

Lithium indium chloride halide superionic conductor for solid-state batteries

Li3InCl6, a halide superionic conductor with a literature-reported room-temperature conductivity of about 2 mS/cm (OBELiX dataset), proposed for cathode-side solid electrolyte layers.

Preliminary screen onlyTmBiO3 / YBiO3 / ScBiO3

Bismuth rare-earth sesquioxide high-permittivity filler for package-integrated capacitors

ScBiO3, YBiO3 and TmBiO3 particles with computed total dielectric constant 37–53, stable under a majority of four ML potentials, proposed as a high-permittivity filler genus for embedded capacitors in advanced packages. IP status is a preliminary screen.

Preliminary screen onlyMo-doped Li7P3S11

Molybdenum-modified Li7P3S11 sulfide electrolyte with enhanced ionic conductivity

Mo-modified thio-LISICON sulfide with an AIMD-extrapolated (unmeasured) ~4.8×10⁻³ S/cm at room temperature, above the reported conductivity of the undoped parent compound.

silicon photonicsDetails →

Potassium niobate thin-film electro-optic Mach-Zehnder modulator for silicon photonics

KNbO3 Mach-Zehnder modulator on an MgO or silicon-nitride buffer. A geometry sweep predicts a voltage-length product near 0.59 V·cm; the device has not been fabricated.

Defined carve-outKNbO3

Preliminary screen onlyBa2HfO4

Ruddlesden-Popper hafnate high-permittivity dual-function filler for embedded capacitors

Ba2HfO4 and related layered hafnate particles (computed bulk-crystal dielectric constant ~53; composite value lower) are proposed as high-permittivity fillers adjacent to embedded capacitors in advanced packages; heat spreading not evaluated.

Preliminary screen onlyNa3-xMxPS4 (M=Ca,Sr,Mg,Zn)

Dry-film divalent-doped Na3PS4 electrolyte system for sodium solid-state batteries

Solvent-free dry-calendered sodium thiophosphate with Ca/Sr/Mg/Zn doping and a sodium-metal stabilization layer — outside existing trivalent/tetravalent electrolyte patent families.

Process for forming a heat-flux-registered zone-modulated TIM bondline

A manufacturing method that maps die heat flux to a spatially varied filler-placement profile, then deposits the TIM by multi-zone stencil, jet, or lamination with mass-conserved filler inventory, forming the zone-modulated bondline in a conventional package assembly line.

packaging manufacturingDetails →

Preliminary screen onlyBa2HfO4

Ruddlesden-Popper and perovskite hafnate high-permittivity dielectrics for HBM4 and DRAM capacitors

Ba2HfO4 (stability unresolved) has computed permittivity approximately 2.4x that of standard HfO2 and 5x that of Al2O3, related hafnates computing lower, targeting MIM capacitor and gate dielectric applications in HBM4 and next-generation DRAM.

HBM4/DRAM memoryDetails →

Preliminary screen onlyBa3Si6N4O9

Barium silicon oxynitride (Ba3Si6N4O9) halogen-free redistribution-layer dielectric

Phonon-confirmed oxynitride with 4.48 eV bandgap and low predicted loss tangent, deposited by PECVD for halogen-free RDL interconnect dielectric stacks.

advanced packaging RDLDetails →

Multifunctional glass-core semiconductor package integrating barrier, dielectric ladder, high-k MIM, and thermal management

A single glass-core package architecture combines a copper diffusion barrier, bandgap-graded dielectric stack, high-permittivity MIM capacitors, and a high-conductivity thermal interface layer to meet a defined thermal and reliability operating envelope for AI and HBM applications.

Preliminary screen onlyM(a)M'(b)F(c) (genus)

Wide-gap crystalline metal-fluoride genus for low-loss superconducting-qubit dielectric layers

A computationally selected family of phonon-stable fluorides with ultra-low computed optical dielectric constants, proposed to replace lossy amorphous oxides in superconducting qubit capacitors.

Reproducible screening process combining multi-engine phonon consensus, fail-safe patent whitespace check, and proxy superconducting temperature triage

Claimed screening process integrates four-engine stability consensus with a fail-safe patent prescreen to shortlist dynamically stable candidates for superconductor and heavy-fermion testing.

materials informaticsDetails →

Preliminary screen onlyNa3AlF6 / MgF2 / K2SiF6 / LiSrAlF6 / LiCaAlF6 / LiYbAlF6 (lead anchors)

31 novel wide-gap crystalline fluorides for superconducting-qubit dielectric applications

Enumeration of 31 fluoride compounds that a preliminary patent prescreen did not find claimed, each with computed dielectric and phonon-stability properties, proposed for qubit dielectric use.

Preliminary screen onlyRE-T-Si (method-selected)

Rare-earth silicide superconducting interconnect, Josephson junction, and resonator device article

Cryogenic device article using a screening-selected RE-T-Si silicide layer as a superconducting interconnect, junction electrode or resonator.

Preliminary screen onlyNa3AlF6

Sodium hexafluoroaluminate (cryolite) as an ultra-low-dielectric crystalline layer for superconducting qubits

Na3AlF6 has the lowest computed optical dielectric constant among the network-solid fluoride candidates screened, proposed to reduce participation-ratio loss in qubit capacitors.

Preliminary screen onlyLiCaAlF6

Quaternary lithium calcium aluminum fluoride dielectric for superconducting-qubit junction passivation

LiCaAlF6 has among the widest computed bandgaps and a phonon-stability result near the top of the fluoride candidates screened, proposed as a crystalline passivation layer at Josephson junctions.

Universal chelating-resin platform for recovering critical minerals from industrial process streams

A single crosslinked resin with interchangeable binding groups is designed to recover germanium, antimony, tin, vanadium, molybdenum, tungsten, and other critical oxocations from zinc, copper, and Bayer streams; selectivity computed for Ge and Sb only, unmeasured.

Integrated co-packaged optics, radiation-hardened photonic module, and HBM4 capacitor stack systems

Multi-family system claims integrate the electro-optic modulator, radiation-hardened substrate, high-permittivity MIM capacitor, and copper electrofill technologies into co-packaged optical modules at 1.6-3.2 Tb/s, radiation-hardened photonic packages, and HBM4 memory stacks.

co-packaged opticsDetails →

Preliminary screen onlyLuBO3

Rare-earth borate (REBO3) scintillator host for X-ray and UV-activator detector systems

LuBO3 and related rare-earth borates combine high density (~6.83 g/cm3) with a wide bandgap (~5.23 eV) for UV-emitting scintillator use; a preliminary screen (not an FTO opinion) found no blocking claims.

Preliminary screen onlyNa3AlF6 / K2SiF6 / LiSrAlF6 / LiCaAlF6 / LiYbAlF6 (hardened subset)

High-confidence fluoride subset combining lowest optical dielectric constant and greatest phonon stability for qubit dielectrics

A narrowed five-member subset of the fluoride genus selected for the strongest combined dielectric and dynamical-stability margins, representing the preferred first-to-manufacture species.

Preliminary screen onlySiO2-B2O3-Al2O3-BaO (low-alkali)

Low-alkali barium borosilicate aluminosilicate glass for glass-core package substrates

A low-alkali (≤1 mol%) barium borosilicate aluminosilicate glass core with Tg 720–800 °C, CTE 3–9 ppm/K, and a targeted (unmeasured) loss tangent below 0.005 at 10–40 GHz for AI and HBM advanced packaging.

glass-core substratesDetails →

Defined carve-outLi6PS5Cl

Unified solid-state lithium-ion conductor platform covering garnet, NASICON, halide, and thiophosphate electrolytes

A single interlayer Markush (LiNbO3, LiAlF4, LiF-rich, Al2O3) applied across four solid-electrolyte families is designed to mitigate interfacial failure without altering bulk ionic conductivity; interface performance untested.

Defined carve-outCa2(Fe,Co,Mn)2O5

Mn-Co co-doped calcium ferrite oxygen carrier for chemical-looping with cement co-production

Doped brownmillerite carrier designed to sustain redox cycling while routing captured CO2 to carbonate industrial slag or fly ash into a low-carbon hydraulic binder.

carbon captureDetails →

Preliminary screen onlyEr3GaS6 / Y3GaS6

Rare-earth gallium sulfide piezoelectric and acoustic device applications

Lead-free polar RE3GaS6 chalcogenides with a computed piezoelectric response, proposed for high-temperature piezoelectric resonators, MEMS sensors and SAW/FBAR filters.

acoustic RF filtersDetails →

Preliminary screen onlyZrTi2O6 (Ti_x Zr_y O_z)

Titanium-zirconium mixed oxide sorbent for PFAS removal from water

Crystalline Ti-Zr binary oxide is predicted (MLIP, engines disagree) to bind PFAS including short-chain species via inner-sphere ligand exchange, capture untested, with Pourbaix stability across drinking-water pH ranges.

water treatmentDetails →

Superconducting qubit device with crystalline fluoride dielectric layer at the capacitor or junction interface

A transmon or Josephson-junction qubit in which a genus-member crystalline fluoride replaces amorphous oxide at the shunt capacitor or junction passivation, reducing two-level-system dielectric loss.

Preliminary screen onlyBa2HfO4

n=1 barium hafnate high-k dielectric for high-capacitance MIM applications

Ba2HfO4 offers a computed dielectric constant of ~53 — the highest in the barium hafnate series — as an alternative MIM capacitor dielectric when maximum capacitance density is required.

Chloride-free deep-eutectic-solvent process for lithium-ion battery cathode recycling

A chloride-free glycine-betaine / organic-acid / ascorbic-acid solvent system proposed to leach lithium, then nickel-cobalt-manganese, in sequence from cathode black mass.

lithium-ion battery recyclingDetails →

Integrated chemical-looping combustion process with downstream CO2 mineralization to cementitious products

Proposed single-loop process designed to capture CO2 from industrial combustion and convert alkaline solid waste toward a supplementary cementitious material — replacing two separate operations (not yet demonstrated).

carbon captureDetails →

Defined carve-outC16H33-P(+)(CH3)2-(CH2)3-SO3(-)

Phosphonium sulfobetaine fume suppressant for hexavalent-chromium plating baths

Structurally distinct phosphonium-center zwitterion predicted (coarse-grained MD) to lower chrome bath surface tension without ammonium sulfobetaines (mist untested), providing an independent claimable alternative to prior art.

metal finishing / hard chrome platingDetails →

Preliminary screen onlyDyScO3

Rare-earth scandate wide-bandgap high-k dielectric for low-leakage package MIM capacitors

DyScO3 and GdScO3 perovskite scandates with wide bandgaps (up to 4.5 eV) and commercial availability, proposed as low-leakage high-k dielectrics for advanced packaging.

Preliminary screen onlyMgNb2O6

High-permittivity columbite and perovskite capacitor dielectrics for HBM and DRAM memory stacks

MgNb2O6 and BaCeO3 thin films (computed permittivity about 15–30), proposed for higher-density vertical capacitors in HBM4 and DRAM stacked-die architectures.

HBM/DRAM memoryDetails →

Preliminary screen onlyEr2SiO5

Erbium oxyorthosilicate radiation-hardened interlayer dielectric for space and defense ICs

Er2SiO5 and related rare-earth oxyorthosilicates, stable under two ML potentials, proposed as radiation-tolerant interlayer dielectrics for space and defence ICs. Radiation hardness has not been tested.

rad-hard space electronicsDetails →

Preliminary screen onlyRE-T-Si (method-selected)

Rare-earth silicide qubit substrate and integrated cryogenic quantum computing system

Quantum-device article and cryogenic system integrating a screening-selected RE-T-Si silicide as qubit substrate, electrode or coupler.

quantum computingDetails →

Database-driven method for selecting low-loss crystalline fluoride dielectrics for superconducting qubits

A zero-new-simulation screening method that queries computed dielectric constant, bandgap, and phonon stability simultaneously to identify candidate qubit dielectric materials from existing materials databases.

Bifunctional silane adhesion promoters for glass-to-copper bonding in glass-core packages

A family of glass-reactive and copper-chelating silane primers — led by 1,2,3-triazole-silane and imidazolidine-thione-silane — are designed to maintain glass-Cu adhesion through thermal cycling and damp-heat stress (coupon tests not yet run).

glass-core metallizationDetails →

Integrated flowsheet platform combining critical-mineral recovery, battery recycling, and advanced packaging

System-level claims covering a germanium-antimony-gallium recovery cascade, a magnet-recycling separation train, a battery-recycling closed loop, and a glass-core packaging dielectric stack — all from a unified technology portfolio.

Tiled boron arsenide heat-spreader plate for advanced semiconductor packaging

Multi-crystal BAs mosaic plates (BAs crystals reach ~1,000–1,300 W/m/K in literature; tiled-plate value unmeasured) are proposed for extreme heat loads in AI accelerators and power electronics without the cost of large monolithic diamond.

Defined carve-outBAs

thin-film photovoltaicsDetails →

Strontium zirconium sulfide thin-film photovoltaic absorber

SrZrS3 chalcoperovskite, an indium- and gallium-free absorber proposed for thin-film photovoltaics.

Defined carve-outSrZrS3

Preliminary screen onlyRu

Self-aligned ruthenium cap on copper interconnects for electromigration lifetime extension

A self-aligned Ru or NiMoP cap deposited on exposed copper in through-glass vias and redistribution layers interrupts surface electromigration pathways and suppresses corrosion under bias.

RDL/BEOL reliabilityDetails →

Defined carve-outYBO3 / LaBO3

Rare-earth orthoborate (YBO3 / LaBO3) higher-permittivity dielectric for packaging RDL

Orthoborate compositions with database-computed static permittivity up to 18.9 (LaBO3), extending the borate dielectric platform toward higher-density embedded passives.

Preliminary screen onlyVP

Vanadium monophosphide catalyst for earth-abundant hydrogen evolution

VP with computed near-optimal hydrogen binding on the (110) surface, proposed as a low-cost, support-free alternative to precious-metal cathodes.

Defined carve-outHf(1-x)ZrxNiSn / NbFeSb

Half-Heusler intermetallic thermoelectric module for high-temperature waste-heat recovery

HfNiSn/ZrNiSn half-Heusler n-legs proposed for tellurium-free thermoelectric modules above 600 K. Module power output has not been measured.

Erbium gallochalcogenide lead-free piezoelectric for transducers and sensors

Er3GaS6 with a computed piezoelectric coefficient above its yttrium analogue, proposed for lead-free acoustic transducers and pyroelectric sensors.

Defined carve-outEr3GaS6

transducersDetails →

Temperature-activated dynamic-covalent TIM matrix for warpage-sensitive and unclamped assemblies

A vitrimer polymer network designed for conformal interfacial contact at clamping pressures as low as 0.05 MPa through bond-exchange stress relaxation, for warpage-sensitive HBM and co-packaged optics assemblies.

stacked HBMDetails →

Thioglycolate leach process for selective antimony recovery from copper smelter byproducts

A controlled pH/redox window (pH 3–7, –0.30 to +0.15 V) using thio-carboxylate lixiviants is predicted to separate Sb(III) from arsenic (no leach run yet) without the hazardous off-gases of alkaline-sulfide processes.

Preliminary screen onlyCrP

Sealed-tube and CVT synthesis process for phase-pure chromium phosphide

Defined thermal synthesis route — sealed ampoule or chemical vapor transport — designed to yield single-phase CrP for use as a support-free hydrogen-evolution cathode.

Defined carve-outMgTa2O6 / SrB4O7 / YAl3B4O12

Trirutile niobate, polar borate, and brownmillerite ceramics for mm-wave filters and solid oxide fuel cells

MgTa2O6, SrB4O7 and YAl3B4O12 monolithic ceramics proposed for 5G/6G millimetre-wave dielectric resonators and filters, with brownmillerite Ba2In2O5 for proton-conducting fuel-cell electrolytes.

mm-wave/5G filtersDetails →

Defined carve-out(TiO2)x(ZrO2)(1-x)

Titanium-zirconium binary oxide and doped iron oxide sorbents for PFAS water treatment

Low-leach TiZr mixed-oxide and cation-substituted iron oxide sorbents are proposed to adsorb PFAS from water across a wide pH range (literature DFT binding only; removal not yet demonstrated) and integrate with the short-chain-triggered treatment selector for verified discharge.

water treatmentDetails →

In-situ glass-ceramic conversion process for enhanced inorganic TIM and lid-attach bondlines

Process that deposits a vanadium-phosphate-germanate or bismuth-silicoborate glass binder and partially crystallizes it in place at 305–350 °C, targeting higher bondline thermal conductivity than the as-deposited glass. Not yet measured.

glass-core packagingDetails →

Hafnium-nickel-tin half-Heusler thermoelectric for mid-temperature waste-heat recovery

HfNiSn and its Hf-Zr-Ti solid solutions, a known n-type half-Heusler thermoelectric family, proposed for automotive-exhaust and RTG thermoelectric legs.

Defined carve-outHfNiSn

Preliminary screen onlyZn4P6N12O

Zinc phosphorus nitride-oxide wide-bandgap gate and interlayer dielectric

Zn4P6N12O, a computed thermodynamically stable wide-bandgap nitride-oxide (computed bandgap near 3 eV) with a preliminary FTO screen, claimed for gate, interlayer, passivation and package-substrate dielectric uses.

semiconductor gate/interlayer dielectricDetails →

Cross-alkali solid-state battery cell with sodium sulfide anode and lithium halide cathode electrolytes

A cell architecture pairing a sodium thiophosphate anode-side electrolyte with a lithium halide cathode-side electrolyte, separated by a discrete nanometer-scale barrier layer, differentiates over the emerging lithium-only barriered trilayer prior art.

Preliminary screen onlyAlGa3N4 / AlGaN2

Aluminum gallium nitride ordered-alloy supplementary filler for non-beryllium TIM architectures

AlGa3N4 and AlGaN2 ordered III-nitride particles, confirmed phonon-stable across four computational potentials, serve as wide-bandgap supplementary fillers admixed with MgSiN2 in thermal interface materials for AI accelerator and HBM packaging.

non-beryllium packagingDetails →

Preliminary screen onlyBPDPA-P

Ion-imprinted phosphonate-bis-picolinamide resin for dysprosium and terbium separation from magnet leachate

A cavity-imprinted polymer bearing a structurally defined BPDPA-P ligand achieves predicted Dy/Tb separation factors of 4–8 per pass and Dy/Nd factors of 30–100, reducing solvent inventory versus conventional SX cascades.

Defined carve-outLi1.2Re0.4Mn0.4O1.8F0.2

Rhenium-stabilized lithium-rich disordered rock-salt cathode for high-capacity lithium-ion cells

Rhenium as a d0 stabilizer in Li-rich disordered rock-salt cathodes targets greater than 250 mAh/g capacity while occupying preliminary-FTO-screened space outside the enumerated stabilizer list of leading competing patent art.

EV batteriesDetails →

Heat-flux-map registration controller and multi-zone TIM dispenser system

A registration controller that converts a die heat-flux map into a filler-placement map and drives a multi-zone stencil printer or jet dispenser, capturing the equipment-vendor lane for zone-modulated TIM deposition lines.

packaging equipmentDetails →

Solid

Methods of synthesizing and depositing the omnibus advanced materials

A cross-family method claim covering solid-state synthesis, single-crystal growth, PLD, sputtering, MOCVD, ALD, and post-deposition processing for compositions in the portfolio, drawing on more than 240 published exact-composition recipes for part of the portfolio.

materials manufacturingDetails →

Preliminary screen onlyMgSiN2

Magnesium silicon nitride ceramic for high-thermal-conductivity power electronics packaging

Lithium-free dense MgSiN2 ceramic with a computed thermal conductivity of ~35 W/m·K and an estimated dielectric constant of 6 to 9, proposed as a thermal-interface substrate for power electronics.

power electronics packagingDetails →

Hafnium nickel tin half-Heusler thermoelectric for mid-temperature waste-heat recovery

HfNiSn and zirconium-, titanium- or antimony-substituted analogues, a known lead- and tellurium-free n-type thermoelectric family, proposed for mid-temperature thermoelectric legs.

Defined carve-outHfNiSn

Preliminary screen onlyAlF3 / ScF3 / AlN

Radiation-hardened aluminum fluoride, scandium fluoride, and aluminum nitride dielectrics for space electronics

AlF3, ScF3, AlN, and alkaline-earth difluoride fallbacks are proposed as a rad-hard insulator and optical-window family for space and nuclear use: wide gaps (AlN computed below 5 eV), phonon stability (ScF3 by analogy), F-vacancy barrier computed for AlF3 only; no radiation data.

rad-hard electronicsDetails →

Process for depositing amorphous aluminum oxychloride dielectric films with controlled chlorine retention

Melt-quench or chlorine-retaining vapor and solution routes are proposed to give amorphous AlOxCly films with chlorine within plus or minus 5 atomic percent of target (a bulk melt-quench MD run; no films made), for the retained-chlorine RDL dielectric for advanced packaging.

Mechanochemical ball-milling process for manufacturing sulfide and halide solid electrolytes

Ball milling at 30–60 Hz for 4–48 hours, with an optional inert-atmosphere anneal, to make halide and sulfide solid electrolytes; process windows are drawn from literature conductivity data.

Defined carve-outRE-T-Si (RE/Ce/La/Nd lead arms)

Down-selected rare-earth transition-metal silicide (RE-T-Si) genus for superconducting and heavy-fermion device applications

Markush genus of RE-T-Si members, phonon-stable in computation and patent-prescreened, claimed for device use and screening method, not as a bare composition.

Preliminary screen onlyRE-T-Si (method-selected, heavy-fermion)

Heavy-fermion rare-earth silicide cryogenic sensor for magnetometry, bolometry, and transition-edge sensing

Device article using a screening-selected heavy-fermion RE-T-Si silicide as a low-temperature magnetometer, bolometer or transition-edge sensor.

cryogenic sensingDetails →

Preliminary screen onlyMgF2

Magnesium fluoride crystalline dielectric layer for mechanically robust superconducting-qubit devices

Rutile MgF2 combines a low optical dielectric constant with the highest bulk modulus in the fluoride candidate set, providing fabrication-stress resilience alongside reduced qubit dielectric loss.

Defined carve-outCeCuSi / CeNiSi / CeRuSi

Cerium-based ternary silicide group (CeCuSi / CeNiSi / CeRuSi) for cryogenic and superconducting device applications

Phonon-stable, patent-prescreened cerium silicide members packaged for device-use licensing in superconducting and cryogenic electronics.

Defined carve-outSr2Hf7O16

Strontium hafnate (Sr2Hf7O16) unusual-stoichiometry scintillator host for high-Z radiation detection

Sr2Hf7O16 extends the high-stopping-power A2B7O16 scintillator family with an A-site strontium substitution, broadening the composition portfolio for CT and calorimetry detectors.

Lanthanum-based ternary silicide (LaRuSi) for cryogenic and superconducting device applications

Phonon-stable, patent-prescreened LaRuSi member packaged for device-use licensing in superconducting and cryogenic electronics.

Defined carve-outLaRuSi

Defined carve-outSr2Zr7O16

Strontium zirconate (Sr2Zr7O16) unusual-stoichiometry scintillator host for radiation detection

Sr2Zr7O16 provides a lighter, lower-cost group-IV variant of the high-density A2B7O16 scintillator structure for CT and calorimetry detector applications.

Neodymium-based ternary silicide (NdNiSi) for cryogenic and superconducting device applications

Phonon-stable, patent-prescreened NdNiSi member packaged for device-use licensing in superconducting and cryogenic electronics.

Defined carve-outNdNiSi

Amorphous aluminum oxychloride ALD film with deliberately retained bound chlorine

A process-defined amorphous Al-O-Cl film with 2–25 at% bound chlorine, proposed as a lower-permittivity alternative to dense alumina with copper passivation. Neither property has been measured.

RDL passivationDetails →

ALD process for depositing bound-chlorine aluminum oxychloride passivation films

A cyclic ALD process using an aluminum precursor and a chlorine reactant is designed to produce amorphous Al-O-Cl films with 2–25 at% retained bound chlorine (xTB-predicted), to be checked by XPS or ToF-SIMS after thermal anneal (not yet done).

RDL passivation fabDetails →

Preliminary screen onlyCaZrO3

Calcium zirconate (CaZrO3) supply-advantaged high-permittivity gate dielectric

Zirconate perovskite, phonon-stable under three ML potentials, with a database-computed permittivity of ~48.7, proposed as a hafnium-free MOS capacitor and gate dielectric.

semiconductor logic/memoryDetails →

Thin-film lithium tantalate ferroelectric dielectric for package MIM and RDL applications

Polycrystalline and amorphous LiTaO3 thin films are proposed as a high-k dielectric option for package MIM and RDL (permittivity uncomputed, films not yet made), with single-crystal SAW and electro-optic substrate uses expressly excluded.

Defined carve-outLiTaO3

Preliminary screen onlyNi-doped Li7P3S11

Nickel-modified Li7P3S11 sulfide electrolyte targeting enhanced ionic conductivity

Ni-modified thio-LISICON targeting ≥1×10⁻³ S/cm at room temperature, providing a second independent dopant route in the high-conductivity sulfide electrolyte lane.

Preliminary screen onlyBa3Hf2O7

Barium hafnate (Ba3Hf2O7) layered-perovskite high-permittivity dielectric extension

Ruddlesden-Popper n=2 hafnate with predicted permittivity ~31.7, extending the alkaline-earth hafnate dielectric genus to layered-structure MOS capacitor embodiments.

semiconductor logic/memoryDetails →

Copper electroplating bath and waveform for void-free fill of high-aspect-ratio glass-core vias

Three independently usable additive packages in an acid copper bath with pulse-reverse waveforms, designed for void- and seam-free bottom-up fill of glass-core vias at aspect ratios of 3 to 20 (not yet demonstrated).

glass-core via metallizationDetails →

Pulse-reverse copper electroplating method for void-free fill of glass-core through-vias

A copper electroplating method using pulse-reverse or current-ramped waveforms with a specialized additive package, designed for void- and seam-free fill of glass-core vias at aspect ratios from 3 to 20 (not yet demonstrated).

via metallization fabDetails →

Preliminary screen onlyLi(2+nz)(Mg,Ca)(1-z)M2(z)Cl4

Cubic-spinel divalent lithium chloride electrolyte genus modulated by Y/Sc/Hf/Ti/Ta/Nb

Open-space family of Li-Mg/Ca cubic chloride spinels with Y, Sc, Hf, Ti, Ta, or Nb modulation — differentiated from crowded Al/Zr/Ga/In halide art by composition and crystal framework.

Defined carve-outLa2Hf2O7

Lanthanum hafnate pyrochlore (La2Hf2O7) dielectric for radiation-hard and RF applications

Phonon-stable pyrochlore with permittivity ~30.8, claimed in narrow bulk and MOCVD forms for RF windows, filters, and radiation-hard components.

rad-hard electronicsDetails →

Preliminary screen onlyLi4HfMgCl8 / Li4MgTiCl8

Li4HfMgCl8 and Li4MgTiCl8 cubic-spinel halide electrolytes for solid-state batteries

In a 36-composition computational screen, the two divalent chloride spinels that stayed stable; proposed as preferred members of the cubic-spinel halide electrolyte genus.

Sequential differential-precipitation process for rare-earth pair separation

A cascade of pH- and redox-adjusted oxalate, carbonate, hydroxide, fluoride, and sulfate precipitation stages is designed to separate Nd/Pr, Dy/Tb, La/Ce, Sm/Eu, and Y/heavy-RE pairs (thermodynamic modelling only) as a possible alternative to long solvent-extraction trains.

rare-earth refiningDetails →

Cobalt-phosphide (Co3P) hydrogen-evolution cathode in open patent whitespace

Support-free Co3P, a scout-stage PGM-free hydrogen-evolution cathode option. IP status is a preliminary screen, not a freedom-to-operate opinion.

Defined carve-outCo3P

Defined carve-outLi3MCl6 (M=Tm,Yb,Lu)

Tm/Yb/Lu lithium chloride halide in a buffer-protected solid-state battery stack

Li3MCl6 (M = Tm, Yb, Lu) rare-earth halides in a buffer-protected halide/sulfide stack, chosen to be distinct from the patented Y/Er/Dy halide analogues. IP status is a preliminary screen.

Defined carve-outLiPO2F2 + LiDFOB + LiFSI

Multi-component fluorinated electrolyte additive blend for LiF-rich SEI formation in lithium-metal batteries

A combination of fluorophosphate, fluoroborate, and fluorosulfonate additives targets a LiF/total-F SEI ratio ≥0.5, which literature associates with suppressed dendrite growth and longer cycle life at high current density; untested in cells.

lithium-metal / silicon-anode batteriesDetails →

Preliminary screen onlyBa8Li2Nb4Ta2O24

Tantalum-substituted lead-free niobate piezoelectric for MLCCs and RF filters

Ba8Li2Nb4Ta2O24 tungsten-bronze composition with a computed polar-distortion proxy about 2.4x that of PbTiO3, proposed as a lead-free route for MLCC and RF-filter ceramics.

lead-free piezo MLCCDetails →

Twenty PFAS-free fluid packages replacing Novec, FC, and HFE product lines

Named closed-Markush packages spanning vapor cleaning, electronics cleaning, azeotropes, immersion cooling, and dielectric test use cases, each specified for the platform purification process (not yet demonstrated).

electronics cleaningDetails →

Preliminary screen onlyBa5Ta4O15 / Ba3Ta2ZnO9 / Ba3MgTa2O9

Barium tantalate high-permittivity filler for package-integrated passive components

Ba5Ta4O15, Ba3Ta2ZnO9 and Ba3MgTa2O9 particles with computed dielectric constants of 42–47, screened for phonon stability with four ML potentials, proposed as high-permittivity fillers for embedded capacitor packaging. IP status is a preliminary screen.

Defined carve-outNa3SbS4 / Na3SbS4-xSex (0<x<=2)

Anhydrous dry-film Na3SbS4 thioantimonate electrolyte for sodium solid-state batteries

Hydrate-free, solvent-free dry-processed sodium thioantimonate (±Se substitution) with interfacial stabilization — protected at the process and architecture level, not the bulk composition.

PFAS-free amphiphilic surfactant compositions for firefighting foam, electroplating, and semiconductor processes

Application-matched zwitterionic head groups (alkyl polyglucoside, hydroxysultaine, betaine, phosphonium-sulfobetaine) paired with siloxane or branched hydrocarbon tails are predicted (a simulated combination) to reach surface tension of 15–22 mN/m as candidate PFAS replacements; drop-in use untested.

firefighting foamDetails →

Preliminary screen onlyCu2Se

Copper selenide multifunctional material for thermoelectric generation, PFAS treatment, and battery anodes

One earth-abundant Cu2Se composition is proposed as a thermoelectric leg, a redox-active PFAS-destruction sorbent, and a lithium conversion anode; zT, PFAS destruction and anode cycling unmeasured.

Preliminary screen onlyZn(Ge1-xSnx)N2

Bandgap-tunable zinc germanium nitride alloy absorber for tandem solar cells and SWIR detectors

Zn(Ge,Sn)N2 ternary nitride alloys are projected by interpolation (hybrid-functional check open) to span roughly 1.1-3.5 eV bandgap, offering an earth-abundant, indium-free absorber for tandem photovoltaics and short-wave infrared detectors without cadmium or tellurium.

tandem photovoltaicsDetails →

SolidChecked by 1 ML potential

Boron oxide glass network low-permittivity underfill and inter-layer dielectric

A B2O3-based glass network with a database-anchored dielectric constant of 3.8–4.5 at 1 MHz and reflow compatibility at 300–400 °C, proposed as a low-permittivity inorganic underfill or inter-layer dielectric for HBM and glass-core packages.

Preliminary screen onlyB2O3 (+ SiO2/Al2O3/ZnO)

RDL/underfillDetails →

Preliminary screen onlyLiBO2 / Li2B4O7 / Li3-xNaxSiO4(Hf,Zr)

Borate and Hf/Zr orthosilicate add-on cathode-coating process for solid-state batteries

Modular process for vacancy-engineered LiBO2, Li2B4O7 borate, and Hf/Zr-orthosilicate films on cathode particles in halide-electrolyte solid-state cell contexts.

Preliminary screen onlyCu3SbS3

Copper antimony sulfide skinnerite thin-film solar absorber

Cu3SbS3 skinnerite is a structurally distinct, earth-abundant absorber candidate with an estimated 1.0-1.5 eV direct bandgap, differentiated from and explicitly excluding the CuSbS2 and Cu3SbSe3 siblings flagged unstable in our ML-potential screen.

thin-film photovoltaicsDetails →

Li4P2O7 pyrophosphate as interlayer or grain-boundary modifier in solid-state batteries

Experimentally anchored lithium pyrophosphate deployed as a positionally-defined battery interface layer or grain-boundary modifier — method-of-use posture, not a bulk composition claim.

Defined carve-outLi4P2O7

Preliminary screen onlyK2PdS2

Potassium palladium sulfide electrocatalyst for CO2 reduction to formate and CO

K2PdS2, a semiconductor with a computed 2.38 eV gap, proposed as a CO2-to-formate or CO cathode in a flow cell; its Pd loading per electrode area is not yet compared with conventional Pd catalysts. Not yet tested.

Computational filler screening method integrated with thermal interface material manufacturing

A multi-potential phonon screening workflow that gates filler selection on cross-engine harmonic stability, then feeds directly into composite preparation and package assembly, creating a defensible materials-selection record.

materials-screening IPDetails →

Li2SiO3 metasilicate as interlayer or grain-boundary modifier in solid-state batteries

Phonon-stable lithium metasilicate as a standalone interlayer or grain-boundary modifier in solid-state cells — cathode-coating use narrowed around established NMC/NCA coating prior art.

Defined carve-outLi2SiO3

Preliminary screen onlyBPO4

Earth-abundant borate and borophosphate dielectrics for advanced packaging and radiation-hard applications

BPO4, SrB4O7, and related borates combine wide bandgaps (~7.3 eV for BPO4) with low supply risk, providing a sustainable alternative to rare-earth or niobium dielectric materials.

Preliminary screen onlyNa2ZrO3 / Na2HfO3

Na2ZrO3/Na2HfO3 wide-gap oxide anode-side interlayer for sodium solid-state batteries

Wide-bandgap sodium zirconate or hafnate interlayer (1 nm–2 µm, ≥4 eV) suppressing sodium-metal void formation and dendrites — the sodium-cell analogue of the lithium-garnet interlayer family.

Retained-chlorine amorphous aluminum oxychloride ALD film for copper-barrier and packaging dielectric applications

Process-defined amorphous Al-Cl-O films (4–8 at% Cl) deposited by ALD serve as copper-diffusion barriers and interlayer dielectrics in glass-through-via and interposer packaging structures.

Defined carve-outNaZr2(PO4)3

Unsubstituted NaZr2(PO4)3 NASICON coating for sodium solid-state battery electrodes

Crystalline unsubstituted NaZr2(PO4)3 positional coating (2 nm–2 µm) on sodium cathode particles or SE interfaces, formed by a dry controlled-atmosphere process — the sole preliminary-FTO-screened survivor in the sodium conductive-coating lane.

Integrated hydrogen-evolution electrode with boron arsenide heat-spreader for high-current electrolyzers

A tiled BAs heat-spreader in thermal contact with a CrP hydrogen-evolution electrode via a shared current collector is designed to remove 100–1,000 W/cm² (above the page's own electrolyzer heat-flux estimate); not yet simulated or built.

Solid

Method of operating and endpoint-qualifying a solid-state battery cell

Cell operation method cycling the ASSB under defined C-rate and stack-pressure conditions and confirming a measured endpoint — CCD, interfacial resistance, capacity retention, or coulombic efficiency.

Defined carve-outLa,Mn:Co3O4

Lanthanum and manganese co-doped cobalt oxide spinel catalyst for oxygen evolution

La+Mn co-doped Co3O4 spinel proposed as an oxygen-evolution anode for alkaline electrolyzers. Selected by descriptor screening; activity has not been measured.

Preliminary screen onlyBaHfO3 / Dy2O3 / YBO3

Hafnate, rare-earth sesquioxide, and borate companion dielectrics for packaging and photonic substrates

A DFT- and DFPT-computed suite of hafnate perovskites (permittivity up to 41), rare-earth oxides and borates, extending the wide-bandgap dielectric platform to high-k capacitor and photonic-substrate uses.

Defined carve-outGe2Sb2Te5

Doped germanium antimony telluride phase-change memory for non-volatile and neuromorphic applications

Ag-, In-, Bi- or Se-co-doped Ge2Sb2Te5 in confined-cell and interface-engineered geometries, proposed for sub-100 ns multi-level switching in non-volatile memory and neuromorphic computing.

non-volatile memoryDetails →

thermoelectric generationDetails →

Doped lead telluride thermoelectric for mid-temperature power generation modules

Tl-doped PbTe is computed (BTE) at ZT of 1.5 to 1.8 at 750 K, with Na-, La-, In-doped and tin- or selenium-alloyed variants not quantified here, claimed in specific dopant ranges and module architectures beyond undoped PbTe.

Defined carve-outPbTe

Solid

Closed-loop sensor-controlled replenishment method for PFAS-free chrome bath surfactants

Surface-tension, foam-height, and redox-signal-gated automatic dosing is designed to maintain consistent mist suppression and extend PFAS-free surfactant life across long plating runs (untested).

metal finishing / hard chrome platingDetails →

Defined carve-outGa2O3 (epsilon/kappa)

Orthorhombic epsilon/kappa gallium oxide power and radiation-hardened semiconductor devices

Phase-pure orthorhombic Ga2O3, distinct from the commercial alpha and beta phases, proposed for ferroelectric-gate normally-off transistors and radiation-hard Schottky diodes in 600 V to 3.3 kV power electronics.

power electronicsDetails →

Preliminary screen onlyYPO4

Heavy rare-earth xenotime orthophosphate radiation-hardened dielectrics

YPO4, ErPO4, LuPO4 and related heavy rare-earth xenotime orthophosphates, phonon-stable in computation, proposed as radiation-tolerant dielectric and passivation materials, distinct from the unstable light rare-earth monazite polymorphs.

rad-hard space electronicsDetails →

Methods of characterizing and testing the omnibus advanced materials

A cross-family test-method claim covering XRD, piezoresponse force microscopy, electro-optic extraction, capacitance-voltage, hydrogen evolution voltammetry, radiation dose testing, and photoemitter quantum efficiency measurement across all portfolio compositions.

materials characterizationDetails →

Preliminary screen onlyMgF2/CaF2/BaF2/SrF2

Metal fluoride low-k dielectric family for capped redistribution layer applications

MgF2, CaF2, BaF2, SrF2 and K2SiF6, checked by two ML potentials, as capped low-k dielectric alternatives to AlF3 for redistribution-layer and MIM applications.

RDL low-kDetails →

Preliminary screen onlySi3N4/AlON/MgSiN2/Sr2Si5N8/B4C

Thermally conductive nitride and carbide liner family for through-glass via thermal management

Silicon nitride, AlON, MgSiN2, undoped Sr2Si5N8 and B4C (only MgSiN2 and Sr2Si5N8 cross-checked by ML potentials) as thermally conductive insulating liner alternatives to aluminum nitride for glass-core via walls.

glass-core thermal linerDetails →

SolidChecked by 1 ML potential

Heteroacene-quinone covalent organic framework for electrochemical direct air capture of CO2

Redox-active framework material that captures CO2 from ambient air by electrochemical potential swing, using heteroacene-quinone cores distinct from prior simple-quinone art.

Defined carve-outC (benzodithiophene-5,10-dione core, representative)

direct air captureDetails →

Validation method for screening-selected rare-earth silicide superconductor and heavy-fermion candidates

Structured test protocol — first-principles phonons, measured superconducting transition, calorimetry, diffraction, and FTO counsel review — converts screening results to claim-grade evidence.

Preliminary screen onlyW-B-N (graded)

Depth-graded tungsten boron nitride copper diffusion barrier for glass-core vias

A W-B-N barrier with a boron-rich glass-facing face and nitrogen-enriched copper-facing face is designed to suppress grain-boundary copper diffusion (untested); the composition gradient is SIMS-verifiable and the claimed feature.

glass-core barrierDetails →

rad-hard packagingDetails →

Zircon substrate layer for low-CTE radiation-tolerant glass-core packages

ZrSiO4 in its ground-state phase is proposed as a low-CTE, high-bandgap (~4.7 eV), radiation-tolerant substrate layer for glass-core packages (CTE and radiation response unmeasured here), with turbine, dental, and refractory uses excluded.

Defined carve-outZrSiO4

Preliminary screen onlyCu6Sn5

Copper tin intermetallic stress-redistribution interlayer for glass-core package reliability

A Cu6Sn5 or related Cu-Sn intermetallic interlayer between low-CTE glass and high-CTE copper, proposed to redistribute thermomechanical stress and reduce package warpage.

glass-core reliabilityDetails →

Silane-passivated silicon anode with PFAS-free polymer binder for lithium-ion batteries

Silane surface grafting on silicon nanostructures with a PFAS-free binder (PAA, CMC, alginate or SBR), proposed to cut first-cycle capacity loss without fluorinated binders.

lithium-ion batteriesDetails →

Preliminary screen onlyLiBF4 / Li3AlF6 / LiHF2

Lithium fluoride-based electrolyte matrix for solid-state batteries

Proposed wide-window LiBF4/Li3AlF6/LiHF2 fluoride matrix (window unmeasured) for use as a high-voltage-compatible solid electrolyte or interphase layer in composite and nanostructured form.

Preliminary screen onlyZr2Fe

Integrated non-evaporable getter layer for moisture and oxygen control in sealed glass-core packages

Zr2Fe and Ti3Al getter alloys integrated within sealed glass-core package regions are proposed to scavenge oxygen and moisture, protecting copper interconnects and halogen-containing dielectric films from corrosion; sorption and protection untested.

sealed-cavity packagingDetails →

Preliminary screen onlyLiSi2N3

Lithium silicon nitride (LiSi2N3) wide-bandgap dielectric for semiconductor packaging — backup position

Phonon-stable LiSi2N3 with a 5.0 eV bandgap and static permittivity of 10.3 offers process adjacency to established silicon nitride passivation flows as a backup dielectric member.

Preliminary screen onlyNdF3

Rare-earth trifluoride dielectrics for millimeter-wave filters and resonators (24-110 GHz)

NdF3/SmF3/TbF3 and related rare-earth trifluorides as low-loss mm-wave dielectric layers and resonator substrates for 5G/6G infrastructure.

millimeter-wave / 5G-6G infrastructureDetails →

Preliminary screen onlyLaBO3

Lanthanum orthoborate (LaBO3) mid-permittivity halogen-free redistribution-layer dielectric

Three-engine phonon-stable rare-earth orthoborate with permittivity ~16.5 and 4.50 eV bandgap as a halogen-free intermediate-permittivity option for advanced packaging RDL stacks.

advanced packaging RDLDetails →

Preliminary screen onlyB2W (+ MB2 diborides)

Refractory boride copper diffusion barrier family for glass-core packaging

Tungsten boride lead plus six transition-metal diborides (TiB2, ZrB2, HfB2, TaB2, VB2, AlB2) cross-checked by ML potentials, and an amorphous boron nitride backup, as design-around copper barrier options.

glass-core barrierDetails →

Preliminary screen onlyZnSiN2

Zinc silicon nitride non-toxic II-IV nitride filler for stress-sensitive HBM stacks

ZnSiN2 particles — a non-beryllium, non-toxic diamond-like nitride — serve as a thermally conductive supplementary filler in MgSiN2-based TIMs for stress-sensitive in-stack HBM thermal interfaces.

Samsung HBM5 in-stackDetails →

Preliminary screen onlyHo2Si2O7

Holmium disilicate (Ho2Si2O7) phonon-stable member of the rare-earth-silicate dielectric platform

Computationally confirmed phonon and thermal stability at 350 K broadens the rare-earth-disilicate Markush for packaging dielectric applications; dielectric permittivity measurement remains pending.

Defined carve-outTiB2 / ZrB2 / HfB2 / AlMgB14 (dielectric-shelled)

Dielectric-shelled titanium, zirconium, and hafnium diboride filler for electrically isolated packaging

Conformal 1–50 nm dielectric shells on TiB2, ZrB2, HfB2 and AlMgB14 particles, designed to keep volume resistivity above 10⁸ Ω·cm at sub-percolation loadings for electrically sensitive package locations.

power-electronics-adjacent packagingDetails →

Preliminary screen onlyGdPO4

Gadolinium orthophosphate (GdPO4) phonon-stable member of the rare-earth-phosphate separation platform

Stability of GdPO4 at 350 K is consistent with the computational soft-mode instability previously seen in the series being confined to terbium and dysprosium (from this member alone, same potential), supporting the rare-earth-phosphate genus breadth.

Defined carve-outR3P+-(CH2)n-SO3-

Phosphonium-sulfobetaine copper electrofill additive for HBM4 through-glass and through-silicon vias

A zwitterionic phosphonium-sulfonate-betaine leveler additive with computed solvated dipole approximately 3x that of Janus Green B targets void-free copper filling of high-aspect-ratio through-glass and through-silicon vias in advanced memory packaging.

HBM4 advanced packagingDetails →

power electronics packagingDetails →

Lithium silicon nitride (LiSi2N3) thermal interface material for power electronics packaging

Phonon-stable wide-gap nitride thermal interface material in narrow method-of-use form: nanostructured grain size, die-attach and preform formats, 25-250 C thermal-cycling context.

Defined carve-outLiSi2N3

Preliminary screen onlySmPO4

Samarium orthophosphate (SmPO4) phonon-stable member of the rare-earth-phosphate separation platform

Phonon and AIMD stability confirmation for SmPO4 contributes to the affirmative argument that soft-mode issues are localized to mid-shell Tb/Dy occupancies, supporting the breadth of the rare-earth separation Markush.

Preliminary screen onlyMn2SbTe

Manganese-rich ordered chalcogenide for quantum-anomalous-Hall and spintronic devices

Mn2SbTe and related manganese-rich phases with a larger computed phonon-stability margin than MnBi2Te4, proposed for quantum-anomalous-Hall and spintronic device research.

quantum hardwareDetails →

Preliminary screen onlyHfO2 (integration partner)

Packaged system integrating hafnium oxide gate dielectric with advanced thermal interface material

A packaged logic or memory die bearing an industry-standard hafnium oxide high-k gate dielectric, co-integrated with a disclosed zone-modulated or nitride-filler TIM-1 layer that thermally manages the same die.

HBM gate-stack + package thermalDetails →

Defined carve-outNa2LiAlF6

Na2LiAlF6 lithium-substituted cryolite fluoride film for high-voltage solid-state batteries

Ultra-wide-bandgap (~7.7 eV) lithium-substituted cryolite as a discrete separator, interlayer, or high-voltage cathode-facing film — differentiated from the unsubstituted Na3AlF6 prior art.

Preliminary screen onlyTmPO4

Thulium orthophosphate (TmPO4) phonon-stable member of the rare-earth-phosphate separation platform

Phonon and AIMD stability of TmPO4 at 350 K, together with GdPO4 and SmPO4 data, is consistent with soft-mode instability being confined to Tb and Dy, supporting Markush coverage for rare-earth recycling.

Defined carve-outCs2Te / Cs3Sb

Cesium telluride and cesium antimonide photocathode materials for photomultipliers and photoinjectors

A Markush group spanning Cs2Te UV photocathodes and Cs3Sb visible photocathodes, claimed for photomultiplier, image-intensifier and accelerator photoinjector uses; freedom-to-operate analysis and counsel review are pending.

photomultipliersDetails →

Preliminary screen onlyBFeHo (B_x Fe_y Ho_u)

Holmium iron boride (BFeHo) magnetically-recoverable PFAS sorbent

Phonon-stable rare-earth iron boride proposed for combined magnetic separability and PFAS sorption (both untested), with a feedstock pathway from end-of-life Nd-Fe-B magnet recycling.

water treatmentDetails →

Preliminary screen onlyCaMgSiO4

Calcium magnesium orthosilicate low-permittivity refractory filler for package underfills

Monticellite CaMgSiO4 particles with dielectric constant ~7 and three-engine-confirmed phonon stability provide a chemically durable, low-permittivity refractory filler for underfill and inter-layer dielectric applications in advanced packages.

package reliability fallbackDetails →

Pre-formed NaBF4 fluoroborate interface film for sodium-metal solid-state batteries

Deliberately deposited discrete NaBF4 film (5–200 nm, ~8.3 eV bandgap) at the sodium-metal anode interface — distinguished from in-situ electrolyte-additive interphases.

Defined carve-outNaBF4

Defined carve-outTl2Ba2Ca2Cu3O10

High-temperature superconductor wire and tape compositions for fusion, MRI, and accelerator magnets

Thallium-2223 cuprate tape (Tc ~119 K), Sc-doped MgB2, and potassium-doped iron arsenide are proposed as high-field magnet conductor compositions for fusion, medical, and particle-accelerator programs (Tc from parent literature; no tape or Jc data).

fusion magnetsDetails →

Preliminary screen onlyRbLaF4

Rubidium lanthanum tetrafluoride (RbLaF4) for photonic coatings and scintillators

Phonon-confirmed alkali rare-earth tetrafluoride with predicted >90% optical transparency across 200-1000 nm for photonic coatings, scintillators, and radiation-hard fluoride substrates.

photonicsDetails →

Crystalline LiBSiO4 borosilicate interlayer and LTCC/mm-wave dielectric material

Phase-pure crystalline lithium borosilicate (~6.4 eV bandgap) proposed as both an insulating battery interlayer and a candidate LTCC/millimeter-wave dielectric with computed alumina-matched CTE (~7.5 ppm/K); densification below 900 °C, co-fire and loss untested.

Defined carve-outLiBSiO4

Preliminary screen onlyCu3PS4 / Cu3Se2 / Cu4KSe3

Copper chalcogenide and thiophosphate companion materials for thermoelectric and battery applications

A family of copper-bearing chalcogenides — including Cu3PS4, Cu3Se2, and alkali-substituted variants — extends the multifunctional Cu2Se platform across thermoelectric and anode uses.

thermoelectricDetails →

Synthesis methods for oxidation-stable chrome-bath fume suppressants

Two patentable routes producing alpha-hydrogen-free sulfonates via sulfite/Bunte-salt chemistry and phosphonium sulfobetaines via sultone ring-opening, both designed to resist chromic-acid degradation.

specialty surfactant manufactureDetails →

Vanadium-iron-antimony half-Heusler thermoelectric — PGM-free, cobalt-free supply-resilient backup

VFeSb is a semiconductor thermoelectric-leg candidate free of platinum-group metals and cobalt, computed stable in three computational models; thermoelectric performance not yet computed.

Defined carve-outVFeSb

Preliminary screen onlyCu(Bi,Sn)

Dual-dopant copper alloy catalyst for selective CO2 electroreduction

Copper co-doped with two post-transition metal atoms (for example bismuth and tin), proposed for tunable selectivity toward formate, CO or C2 products in CO2 electroreduction.

Preliminary screen onlyNa2PdS2

Sodium palladium sulfide backup electrocatalyst for electrochemical CO2 reduction

Na2PdS2 is a dynamically stable polar sulfide with confirmed dielectric character, serving as a backup CO2-reduction cathode pending bandgap refinement.

Strontium zinc phosphide Zintl photovoltaic absorber with earth-abundant composition

SrZn2P2 combines a direct bandgap of ~1.72 eV matched to single-junction solar efficiency with earth-abundant, non-toxic elements, claimed through device-stack and passivation embodiments distinct from the published bare-composition film.

Defined carve-outSrZn2P2

thin-film PVDetails →

Preliminary screen onlyAlFO

Crystalline aluminum oxyfluoride and fluoroborate barrier dielectrics for advanced packaging

AlFO, topaz, and BaAlBO3F2 are phonon-characterizable wide-gap crystalline barrier dielectrics providing a backup alternative to amorphous Al-Cl-O in packaging applications.

Defined carve-outLi3OCl / Na2LiAlF6 / Na2.6Mg0.2PS4

Lithium oxide chloride antiperovskite and magnesium-doped sodium thiophosphate solid electrolytes

Li3OCl antiperovskite and divalent magnesium- or zinc-doped Na3PS4 variants provide sodium and lithium solid electrolyte options that avoid tungsten substitution and other compositions covered by recent prior art.

Method of electrochemical CO2 reduction using an alkali palladium sulfide cathode

Operating method for a CO2 reduction cell with a K2PdS2 or Na2PdS2 cathode targeting formate or CO at Faradaic efficiencies of 30–80% and potentials of -0.7 to -1.1 V vs RHE.

SolidChecked by 1 ML potential

Barium lithium niobate tetragonal tungsten bronze lead-free piezoelectric

Ba8Li2Nb6O24, a tungsten-bronze candidate ferroelectric screened as phonon-stable, is proposed as a lead-free alternative to PZT for piezoelectric transducer and electro-optic component applications.

Preliminary screen onlyBa8Li2Nb6O24

piezo devicesDetails →

Preliminary screen onlyK2PdS2

Layered palladium and platinum sulfide chalcogenides for broadband infrared windows and nonlinear optics

K2PdS2, Na2PdS2, K2PtS2, and Rb2PtS2 are computed phonon-stable, closed-shell chalcogenides with an inferred 0.5 to 25 micron window, proposed as broadband IR windows and possible second-harmonic-generation hosts (SHG unverified; parent may be centrosymmetric) versus silver gallium sulfide.

IR photonicsDetails →

Preliminary screen onlyLi2BeCl4

Low-beryllium lithium halide solid electrolyte as an alternative to indium-based conductors

Li2BeCl4 sits near the thermodynamic hull; its Be content exceeds the 1.5 wt% cap, which only Mg-substituted variants (not yet computed) would meet, offering a low-critical-material pathway to lithium halide solid electrolytes distinct from indium- and rare-earth-based competitors.

Preliminary screen onlyR-P+(R'')3-CH2-CH(OH)-CH2-SO3-

Phosphonium-sulfobetaine PFAS-free surfactant for oxidative chrome-bath fume suppression

A phosphonium head group replaces the conventional ammonium in sulfobetaine surfactants, proposed to improve hydrolytic stability under chromic-acid and oxidative electroplating conditions (untested; synthesis prophetic).

electroplatingDetails →

Defined carve-outxLi2MnO3.(1-x)LiMO2

Lithium-manganese-rich rocksalt cobalt-free cathode — backup position with oxide coating

A Li2MnO3-stabilized layered-composite and LiMn2O4 spinel backup arm, claimed in combination with the shared coating Markush, preserves a high-capacity cobalt-free cathode option within the EF7 genus.

lithium-ion batteriesDetails →

rad-hard packaging (candidate)Details →

Magnesium aluminoborate sinhalite ceramic for millimeter-wave and RF dielectric components

MgAlBO4 sinhalite, phonon-stable in computation, an alumina-CTE-matched wide-bandgap aluminoborate with computed permittivity near 8.5, proposed for 5G/6G FR2 filters. IP status is a preliminary screen.

Defined carve-outMgAlBO4

Preliminary screen onlyBeCN2

Encapsulated beryllium carbodiimide and beryllium silicon nitride filler for closed-process packaging

Shell-encapsulated BeCN2 or BeSiN2 particles (hydrolysis-resistant shell not yet made) in controlled admixture with MgSiN2 are proposed for high stiffness (bulk-crystal value computed) in closed-process packaging environments where beryllium handling protocols are in place.

closed-process packagingDetails →

Licensing requiredLi2PNO2

Crystalline Li2PNO2 phosphonitride for interface-engineered solid-state battery use

Crystalline LiPON-analog phosphonitride available for specific non-anticipated interface-engineered architectures only — bulk composition and bulk solid-electrolyte use are prior-art established.

BeSiN2 / HfGeO4 / ZrGeO4 / YAl3B4O12 (lead promoted arms)

Dielectric and substrate backup compositions: BeSiN2, HfGeO4, ZrGeO4, YAl3B4O12, and related species

Genus-broadening portfolio of ten candidate dielectric, wide-gap, and fluoride-matrix compositions, four of which have been promoted to three-engine phonon-stable status pending full FTO clearance.

dielectricsDetails →

Preliminary screen onlyC3N4

Cubic carbon nitride hard-phase TIM filler produced by high-pressure synthesis

Cubic C3N4 particles, if they can be synthesized phase-pure at ≥5 GPa (not yet demonstrated), are proposed as a wide-bandgap, high-stiffness hotspot filler within zone-modulated thermal interface materials for AI accelerator packages.

AI accelerator high-flux hotspot fillerDetails →

Ionic conductivity acceptance and in-line QC method for solid-state electrolyte manufacturing

Composition-agnostic incoming-acceptance process gating solid-state electrolyte lots by measured room-temperature AC-impedance conductivity thresholds, integrated into ASSB stack manufacturing.

solid-state battery manufacturingDetails →

Preliminary screen onlySr2Sc2B4O11

Strontium scandium borate (Sr2Sc2B4O11) halogen-free redistribution-layer dielectric

Halogen-free borate glass-ceramic RDL dielectric with 4.47 eV bandgap, claimed as a dependent embodiment pending DFT phonon refinement of a residual soft mode.

advanced packaging RDLDetails →

package reliability fallbackDetails →

Rare-earth stannate pyrochlore reliability filler for advanced packaging

Y2Sn2O7, Sm2Sn2O7 and related rare-earth stannate pyrochlore particles, proposed as secondary fillers for thermal-cycling and dielectric-breakdown reliability in advanced package composites.

Defined carve-outY2Sn2O7

Defined carve-outBaZr(PO4)2

Barium zirconium phosphate (BaZr(PO4)2) non-luminescent high-permittivity dielectric

Un-activated rare-earth-free phosphate high-k dielectric with permittivity ~18.6, expressly distinct from rare-earth-activated phosphor hosts in the same material family.

semiconductor passivesDetails →

Preliminary screen onlyBaMoO4

Barium molybdate and tungstate mid-permittivity additional filler for package reliability

BaMoO4, SrMoO4, CaMoO4, and BaWO4 scheelite-class particles at 5–20 vol% are proposed as mid-permittivity (dielectric constant ~10, computed for BaMoO4) fillers in advanced package composites; reliability and thermal-mass benefits hypothesised.

package reliabilityDetails →

Defined carve-outLu2Si2O7

Rare-earth silicate dielectrics (Lu/Y/La/Gd, ytterbium excluded) for MOS and RF use

Lu2Si2O7/Y/La/Gd silicate dielectric genus for non-EBC applications, claimed dependent and relaxation-converged pending DFT phonon confirmation; ytterbium silicates expressly excluded.

semiconductor passivesDetails →

Preliminary screen onlyZrSiO4 / HfSiO4

Hafnon, zircon, and berlinite refractory filler for dielectric isolation in packaging

HfSiO4, ZrSiO4, Y2Si2O7, and AlPO4 on-hull refractory phases provide chemical durability and dielectric isolation as secondary fillers in advanced package underfills and thermal interface composites.

package reliabilityDetails →

Defined carve-outNa2LiAlF6

Sodium-lithium hexafluoroaluminate (Na2LiAlF6) solid electrolyte for lithium batteries

Elpasolite fluoroaluminate claimed in narrow lithium-battery context — 2:1 Na:Li stoichiometry with lithium-metal anode — distinct from sodium-ion and aluminum-electrolysis prior art.

solid-state lithium batteriesDetails →

Defined carve-outNiP2 / Ni2P

Nickel phosphide hydrogen-evolution method-of-use reference (comparative disclosure)

NiP2 and Ni2P are disclosed as method-of-use reference materials only; inter-model disagreement and surface restructuring rule them out as lead compositions.

Defined carve-outNa2Al2B2O7

Sodium aluminoborate (Na2Al2B2O7) glass for EUV pellicle membranes

Alkali aluminoborate thin-film (<10 um) with predicted >80% EUV transmission at 13.5 nm, claimed in narrow film form as a non-silicon EUV pellicle alternative.

EUV lithographyDetails →

Defined carve-outCoSb3 / Mg3Sb2 / SnTe

Skutterudite, Zintl, and tin-telluride backup thermoelectric compositions for segmented modules

CoSb3, Mg3Sb2, and SnTe are proposed as complementary p-type and n-type thermoelectric legs for segmented or graded modules, with computed (constant-tau, doping-dependent) Seebeck coefficients up to 362 µV/K; no legs made.

Natural-ester transformer fluid uprating method with trifunctional antioxidant additive

Defensive method-of-use disclosure for thermally extending Kraft-paper transformer life using a natural-ester fluid and a single trifunctional antioxidant-passivator-scavenger conjugate.

transformer / dielectric fluidsDetails →

rad-hard packagingDetails →

Complex fluoride dielectrics with wide bandgap and mid-range permittivity for radiation-hard packaging layers

BaHfF6 and related complex fluorides with a computed ~7 eV bandgap and computed permittivity of about 12–16, proposed for radiation-hard packaging layers under a hermetic oxide cap.

Defined carve-outBaHfF6

Yttrium oxychloride reference composition demonstrating dielectric range of the aluminum oxychloride barrier platform

Crystalline YOCl (computed permittivity ~22.3, bandgap ~5.1 eV) is offered as a retained-halogen cognate (no Al) at the top of a stated permittivity range of 3.3 to 22.3 for the barrier family (3.3 unsourced here; neither end measured), filed under packaging-barrier use only.

Defined carve-outYOCl

Preliminary screen onlyRbLaF4

Rubidium lanthanum fluoride solid electrolyte for fluoride-ion batteries

Heavy-alkali RbLaF4 and related fluorides provide enlarged ion channels and a computed fluoride migration barrier of 0.45 to 0.55 eV, addressing a key conductivity gap in fluoride-shuttle battery electrolytes.

batteriesDetails →

Preliminary screen onlyLi3AlF6

Lithium and sodium aluminum fluoride wide-window solid electrolytes for high-voltage batteries

Li3AlF6, LiBF4, and related fluoride salts offer a computed electrochemical stability window up to 5.5 V versus lithium with reduced moisture sensitivity compared to thiophosphate electrolytes.

Preliminary screen onlyBaHfN2 / BaZnOS / K2HfO3

Extended hafnate variant dielectrics including barium hafnium nitride, barium zinc oxysulfide, and potassium hafnate

BaHfN2, BaZnOS, K2HfO3, and strontium Ruddlesden-Popper hafnates provide compositional breadth around the core hafnate high-k dielectric family for MIM capacitor and cathode-coating applications.

semiconductor memoryDetails →

Preliminary screen onlyBeCN2

Beryllium carbon nitride wide-bandgap ceramic for thermal interface and radiation-hard substrates

Computed phonon-stable BeCN2, with a high phonon energy scale and an expected wide bandgap, is proposed to complement MgSiN2 as a thermal-interface and radiation-hard dielectric substrate, with beryllium capped through sealed-substrate handling requirements.

power-electronics packagingDetails →

Preliminary screen onlyCrP/phosphorene

Transition metal phosphide on black phosphorene heterostructure catalyst for hydrogen evolution

CrP, WP, or VP deposited on a 2D black-phosphorene support is proposed (prophetic, unverified) to shift the work function by at least 100 mV versus the bulk phosphide reference, targeting enhanced HER activity through the phosphide-phosphorene interface effect.

CeCuSi heavy-fermion silicide for superconducting interconnect and cryogenic sensing device use

CeCuSi, phonon-stable in computation, claimed for device uses in superconducting interconnects and heavy-fermion sensing, not as a bare composition.

Licensing requiredCeCuSi

Claim-boundary comparative examples defining what each patent family does not cover

Eight documented negative controls — including carbon-supported CrP, undoped Ca2Fe2O5, nickel phosphides, bulk Cu2Se, undoped MgB2, and crystalline Al2O3 ALD — establish the outer limits of the portfolio claims.

Details →

AgAlS2 / AgAlSe2 / AgAlTe2

Silver aluminum chalcogenide polar absorber and nonlinear optical materials (computed stage)

AgAlS2, AgAlSe2 and AgAlTe2 are proposed as a bandgap-tunable polar chalcogenide absorber and nonlinear optical material series, as alternatives to copper indium chalcogenides; stability and optical properties still need experimental validation.

photovoltaicsDetails →

Defined carve-outCd4B6O13

Cadmium hexaborate (Cd4B6O13) candidate packaging dielectric — property validation pending

Computationally identified cadmium borate held as a genus-completion backup; dielectric properties and full stability validation not yet confirmed.

advanced semiconductor packaging (candidate)Details →

rad-hard packaging (candidate)Details →

Tin tetraborate borate dielectric backup material (development stage)

SnB4O7, phonon-stable in computation, a tin-substituted tetraborate analogous to the SrB4O7 dielectric lead, disclosed as a development-stage backup pending dielectric tensor and bandgap results.

Defined carve-outSnB4O7

Defined carve-outCa2B2SiO7

Calcium borosilicate (Ca2B2SiO7) candidate packaging dielectric — dielectric properties pending

Phonon-stable, supply-chain-clean calcium borosilicate backup member; dielectric permittivity and bandgap not yet computed and require experimental confirmation.

advanced semiconductor packaging (candidate)Details →

high-permittivity dielectricsDetails →

Gold-bearing auride high-permittivity dielectric genus (development stage)

A five-member gold-bearing Pmmn-structured dielectric genus, three members of which show computed permittivity of 13-15, represents an early-stage high-permittivity candidate with partial proof and an export-control consideration requiring due diligence.

(X)4(X)3Au

Bipolar-membrane electrodialysis polishing step for antimony, arsenic, and bismuth separation — reserved filing

A sulfonated polyaromatic bipolar-membrane electrodialysis stack for downstream Sb/As/Bi polishing after thioglycolate leach; priority position preserved for a separate filing, not yet substantively claimed.

Preliminary screen onlyAlHO2

Aluminum oxyhydroxide narrow-corridor reliability filler with bounded thermal conductivity claim

Boehmite-diaspore AlHO2 particles are claimed within a tight triple-bound corridor — requiring simultaneously high Slack and Cahill estimates and composite thermal conductivity — reflecting and honestly disclosing a 30-fold disagreement between computational thermal-conductivity sources.

package reliability fallbackDetails →

oxide dielectricsDetails →

Lanthanide oxide dielectric genus for advanced semiconductor applications (development stage)

A triclinic lanthanide oxide genus with 5 of 10 members phonon-stable in computation, disclosed as a development-stage asset; dielectric permittivity has not yet been computed.

O12(Ln)4(X)3

Unsubstituted barium lithium niobate TTB parent (excluded comparative example)

Ba8Li2Nb6O24 is the dynamically unstable parent phase expressly excluded from the lead-free piezoelectric claims; it serves as the boundary-defining comparative example that establishes the novelty of the tantalum-substituted and magnesium-stabilized leads.

Ba8Li2Nb6O24

Details →

Catalog of computationally excluded compositions supporting non-obviousness of disclosed TIM fillers

Approximately 70 surveyed compositions — including molybdenum, tungsten, and chromium diborides, beryllium nitride, and several mixed-anion phases — are documented as harmonically unstable or otherwise disqualified, establishing the deliberate and non-obvious selection of the disclosed filler families.

prosecution-defenseDetails →

Under reviewChecked by 2 ML potentials

Aluminum nitride thermal liner for through-glass vias in advanced packaging

Wurtzite AlN via-wall liner proposed as a heat path through a glass-core via. A one-dimensional series-resistance model projects lower through-via thermal resistance; the effect has not been measured.

Preliminary screen onlyAlN