AlP

Aluminum phosphide · AlP

Aluminum phosphide is a stable III-V semiconductor material utilized in both advanced electronic components and industrial fumigation processes.

Crystal structure of AlP (cubic, F-43m (No. 216))
Ground-state structure · Materials Project
Overview

About Aluminum phosphide

Aluminum phosphide is a prominent member of the III-V semiconductor family, characterized by its robust thermodynamic stability. As a binary compound, it serves as a critical material in the development of optoelectronic devices and high-frequency electronics due to its favorable electronic structure.

Beyond its role in semiconductor technology, this compound is widely recognized for its chemical reactivity in specific industrial and agricultural contexts. Its ability to release phosphine gas makes it a highly effective, albeit hazardous, agent for pest control and grain preservation.

At a glance

Key Properties

Cross-validated computational properties for Aluminum phosphide, aggregated across 5 databases.

Band Gap

0.73–2.16 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

205
5 databases, 32 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of AlP. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for AlP, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
F-43m (No. 216)cubic1.790.0000-0.752—
F-43m (No. 216)cubic1.630.0000-8.6042.35
——1.750.0000-0.737—
——2.090.0039-0.733—
P63mc (No. 186)hexagonal1.960.0044-8.6002.35
P63mc (No. 186)hexagonal2.050.0066-0.745—
——0.000.2507-0.486—
——0.000.2701-0.467—
——0.000.2920-0.445—
Fm-3m (No. 225)cubic0.000.3383-0.413—
Imm2 (No. 44)orthorhombic0.730.3867-0.365—
——0.000.5689-0.168—
Uses

Applications

Where Aluminum phosphide is used.

Semiconductor manufacturingOptoelectronicsFumigant for grain storagePest control
Reference

Frequently Asked Questions

Common questions about Aluminum phosphide, answered from cross-validated data.

What is AlP?

Aluminum phosphide is a stable III-V semiconductor material utilized in both advanced electronic components and industrial fumigation processes.

More questions
What is AlP used for?
Aluminum phosphide (AlP) is used in semiconductor manufacturing, optoelectronics, fumigant for grain storage, and pest control.
What is the band gap of AlP?
Aluminum phosphide (AlP) has a DFT-computed band gap of 0.73–2.16 eV across 205 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is AlP a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 2.16 eV (a semiconductor). Measured gaps are typically larger.
Is AlP thermodynamically stable?
Yes — Aluminum phosphide (AlP) sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of AlP?
The reference structure of Aluminum phosphide (AlP) is cubic symmetry, space group F-43m (No. 216).
How many polymorphs of AlP are known?
205 structures of AlP are reported across 5 databases, spanning 32 distinct space groups.
What elements does AlP contain?
Aluminum phosphide (AlP) contains Al and P (2 elements).
Where does the data for AlP come from?
AlP data is cross-referenced from jarvis, materials_project, oqmd, mpaloe.
Comparison

How It Compares

Within the iii-v semiconductors class.

Within the III-V semiconductor class, Aluminum phosphide occupies a unique niche compared to its siblings like Gallium phosphide or Aluminum arsenide. While it shares the characteristic zinc-blende crystal structure common to many of these compounds, its specific electronic properties and reactivity profile distinguish it from the more inert nitrides like Aluminum nitride or Indium nitride.

Explore

Related Compounds

Other III-V Semiconductors in the database.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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