O24Sn12

O24Sn12 has a DFT band gap of 0.32–2.09 eV across 31 reported structures in 18 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for O24Sn12, aggregated across 2 databases.

Band Gap

0.32–2.09 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

31
2 databases, 18 space groups
Reference

Frequently Asked Questions

Common questions about O24Sn12, answered from cross-validated data.

What is the band gap of O24Sn12?

O24Sn12 has a DFT-computed band gap of 0.32–2.09 eV across 31 reported structures.

More questions
Is O24Sn12 a metal, semiconductor, or insulator?
With a band gap up to 2.09 eV it is a semiconductor.
Is O24Sn12 thermodynamically stable?
Yes — O24Sn12 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of O24Sn12 are known?
31 structures of O24Sn12 are reported across 2 databases, spanning 18 distinct space groups.
What elements does O24Sn12 contain?
O24Sn12 contains O and Sn (2 elements).
Where does the data for O24Sn12 come from?
O24Sn12 data is cross-referenced from latticegraph.
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Related Compounds

Other Conversion Oxide Anodes in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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