O1Sn1

O1Sn1 has a DFT band gap of 0.41–1.64 eV across 27 reported structures in 12 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for O1Sn1, aggregated across 3 databases.

Band Gap

0.41–1.64 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

27
3 databases, 12 space groups
Reference

Frequently Asked Questions

Common questions about O1Sn1, answered from cross-validated data.

What is the band gap of O1Sn1?

O1Sn1 has a DFT-computed band gap of 0.41–1.64 eV across 27 reported structures.

More questions
Is O1Sn1 a metal, semiconductor, or insulator?
With a band gap up to 1.64 eV it is a semiconductor.
Is O1Sn1 thermodynamically stable?
Yes — O1Sn1 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of O1Sn1 are known?
27 structures of O1Sn1 are reported across 3 databases, spanning 12 distinct space groups.
What elements does O1Sn1 contain?
O1Sn1 contains O and Sn (2 elements).
Where does the data for O1Sn1 come from?
O1Sn1 data is cross-referenced from latticegraph.
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Related Compounds

Other Conversion Oxide Anodes in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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