MgSiN2

Magnesium silicon nitride is a thermodynamically stable, wide-gap semiconductor material used in advanced materials research.

Crystal structure of MgSiN2 (orthorhombic, Pna21 (No. 33))
Ground-state structure · Materials Project
Overview

About MgSiN2

Magnesium silicon nitride is a thermodynamically stable compound within the nitride semiconductor family. Its electronic character as a wide-gap insulator makes it a subject of significant interest for materials science research, particularly where robust dielectric properties are required.

The material is characterized by a high degree of structural diversity, as evidenced by numerous reported configurations across multiple databases. This versatility positions it as a compelling candidate for specialized electronic and optoelectronic applications that demand stable, wide-gap inorganic frameworks.

At a glance

Key Properties

Cross-validated computational properties for MgSiN2, aggregated across 3 databases.

Band Gap

3.62–4.46 eV
Range across DFT structures · ground state: insulator

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

12
3 databases, 4 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of MgSiN2. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for MgSiN2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pna21 (No. 33)orthorhombic4.460.0000-1.333—
——4.290.0000-1.292—
Pna21 (No. 33)orthorhombic3.970.0000-7.2793.15
I-42d (No. 122)tetragonal3.700.0292-1.304—
I-42d (No. 122)tetragonal3.470.0293-7.2503.18
——3.620.0309-1.261—
R-3m (No. 166)trigonal4.180.2826-6.9973.87
R-3m (No. 166)trigonal4.430.2899-1.043—
P4/mmm (No. 123)tetragonal0.000.7668-0.566—
Pna21 (No. 33)orthorhombic———3.14
Pna21 (No. 33)orthorhombic———3.14
Pna21 (No. 33)orthorhombic———3.07
Uses

Applications

Where MgSiN2 is used.

Semiconductor researchDielectric materials developmentOptoelectronic component studies
Reference

Frequently Asked Questions

Common questions about MgSiN2, answered from cross-validated data.

What is MgSiN2?

Magnesium silicon nitride is a thermodynamically stable, wide-gap semiconductor material used in advanced materials research.

More questions
What is MgSiN2 used for?
MgSiN2 is used in semiconductor research, dielectric materials development, and optoelectronic component studies.
What is the band gap of MgSiN2?
MgSiN2 has a DFT-computed band gap of 3.62–4.46 eV across 12 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is MgSiN2 a metal, semiconductor, or insulator?
DFT predicts a wide band gap of up to 4.46 eV (an insulator or wide-band-gap material).
Is MgSiN2 thermodynamically stable?
Yes — MgSiN2 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of MgSiN2?
The reference structure of MgSiN2 is orthorhombic symmetry, space group Pna21 (No. 33).
How many polymorphs of MgSiN2 are known?
12 structures of MgSiN2 are reported across 3 databases, spanning 4 distinct space groups.
What elements does MgSiN2 contain?
MgSiN2 contains Mg, N, and Si (3 elements).
Where does the data for MgSiN2 come from?
MgSiN2 data is cross-referenced from jarvis, oqmd, materials_project, cod, mpaloe.
Comparison

How It Compares

Within the nitride semiconductors class.

Unlike the more commonly utilized group-III nitrides such as GaN and AlN, which are heavily researched for their role in high-frequency electronics and light-emitting diodes, MgSiN2 offers a distinct structural motif as a ternary nitride. While BN is well-known for its unique layered or cubic forms, MgSiN2 provides a different chemical landscape that expands the design space for insulating semiconductor materials.

Explore

Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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