Si3N4
Si3N4 has a DFT band gap of 0.18–4.65 eV across 49 reported structures in 12 space groups. Cross-validated across 3 computational databases.
At a glance
Key Properties
Cross-validated computational properties for Si3N4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.18–4.65 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
49
3 databases, 12 space groups
Synthesis
Synthesis Routes
Literature-extracted synthesis procedures targeting Si3N4.
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Intellectual Property
Patent Landscape
15 patents reference Si3N4 or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 7638200 | Process for making dense mixed metal Si3N4 targets | — | — |
| 8658432 | Si/Si3N4 system nanosized particles, biosubstance labeling agent employing the nanosized particles, and method | — | — |
| 7622152 | MoSi2-Si3N4 composite coating and manufacturing method thereof | — | — |
| 6284690 | Si3N4 ceramic, Si-base composition for production thereof and processes for producing these | — | — |
| 6391811 | Pest resistant MoSi2-based materials containing in-situ grown &bgr;-Si3N4 whiskers | — | — |
| 6544917 | Si3N4 ceramic, Si-base composition for its production, and method for its production | — | — |
| 9302944 | Si3N4 insulator material for corona discharge igniter systems | — | — |
| 6617272 | Si3N4 sintered body with high thermal conductivity and method for producing the same | — | — |
| 7446066 | Reverse reaction sintering of Si3N4/SiC composites | — | — |
| 8673795 | Si3N4 insulator material for corona discharge igniter systems | — | — |
Reference
Frequently Asked Questions
Common questions about Si3N4, answered from cross-validated data.
What is the band gap of Si3N4?
Si3N4 has a DFT-computed band gap of 0.18–4.65 eV across 49 reported structures.
More questions
Is Si3N4 a metal, semiconductor, or insulator?
With a wide band gap up to 4.65 eV it is an insulator / wide-band-gap material.
Is Si3N4 thermodynamically stable?
Yes — Si3N4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Si3N4 are known?
49 structures of Si3N4 are reported across 3 databases, spanning 12 distinct space groups.
How is Si3N4 synthesized?
Literature-reported routes for Si3N4 include solid state (8 procedures documented).
What elements does Si3N4 contain?
Si3N4 contains N and Si (2 elements).
Where does the data for Si3N4 come from?
Si3N4 data is cross-referenced from latticegraph.
Explore
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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