SiN
SiN has a DFT band gap of Metallic / not reported across 245 reported structures in 30 space groups. Cross-validated across 3 computational databases.
At a glance
Key Properties
Cross-validated computational properties for SiN, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Metallic / not reported
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
—
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Not assessed
2 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
245
3 databases, 30 space groups
Synthesis
Synthesis Routes
Literature-extracted synthesis procedures targeting SiN.
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Intellectual Property
Patent Landscape
20 patents reference SiN or close compositional variants.
| Patent | Title | Assignee | Granted |
|---|---|---|---|
| 10410857 | Formation of SiN thin films | — | — |
| 8999847 | a-Si seasoning effect to improve SiN run-to-run uniformity | — | — |
| 11367613 | Deposition of SiN | — | — |
| 10741386 | Deposition of SiN | — | — |
| 11133181 | Formation of SiN thin films | — | — |
| 10580645 | Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors | — | — |
| 11784043 | Formation of SiN thin films | — | — |
| 7271110 | High density plasma and bias RF power process to make stable FSG with less free F and SiN with less H to enhan | — | — |
| 12344933 | SiN film embedding method | — | — |
| 10262854 | Deposition of SiN | — | — |
Reference
Frequently Asked Questions
Common questions about SiN, answered from cross-validated data.
What is the band gap of SiN?
SiN is computed to be metallic (no band gap) in the reported DFT structures.
More questions
Is SiN a metal, semiconductor, or insulator?
Computed band structures report no gap, so it is metallic.
How many polymorphs of SiN are known?
245 structures of SiN are reported across 3 databases, spanning 30 distinct space groups.
How is SiN synthesized?
Literature-reported routes for SiN include solid state (10 procedures documented).
What elements does SiN contain?
SiN contains N and Si (2 elements).
Where does the data for SiN come from?
SiN data is cross-referenced from latticegraph.
Explore
Related Compounds
Other Silicon Anode Materials in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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