In4O6

In4O6 has a DFT band gap of 0.22–0.96 eV across 13 reported structures in 6 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for In4O6, aggregated across 3 databases.

Band Gap

0.22–0.96 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

13
3 databases, 6 space groups
Reference

Frequently Asked Questions

Common questions about In4O6, answered from cross-validated data.

What is the band gap of In4O6?

In4O6 has a DFT-computed band gap of 0.22–0.96 eV across 13 reported structures.

More questions
Is In4O6 a metal, semiconductor, or insulator?
With a band gap up to 0.96 eV it is a semiconductor.
Is In4O6 thermodynamically stable?
Yes — In4O6 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of In4O6 are known?
13 structures of In4O6 are reported across 3 databases, spanning 6 distinct space groups.
What elements does In4O6 contain?
In4O6 contains In and O (2 elements).
Where does the data for In4O6 come from?
In4O6 data is cross-referenced from latticegraph.
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Related Compounds

Other Wide-Bandgap Oxide Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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