In4O6

In4O6 has a DFT band gap of 0.22–0.96 eV across 13 reported structures in 6 space groups; its lowest-energy polymorph is cubic (Ia-3 (No. 206)). Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for In4O6, aggregated across 3 databases.

Band Gap

0.22–0.96 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

13
3 databases, 6 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for In4O6, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Ia-3 (No. 206)cubic0.630.0000-6.0677.00
R-3c (No. 167)trigonal0.960.0207-6.0467.19
Pbca (No. 61)orthorhombic0.880.0311-6.0357.32
Pbcn (No. 60)orthorhombic0.760.0378-6.0297.43
Pnma (No. 62)orthorhombic0.580.2436-5.8237.59
Pnma (No. 62)orthorhombic0.220.2462-5.8207.62
P1 (No. 1)triclinic0.680.4124-5.6546.22
P1 (No. 1)triclinic0.670.5817-5.4856.05
P1 (No. 1)triclinic0.000.6235-5.4436.02
R-3c (No. 167)
R-3c (No. 167)
6.57
Reference

Frequently Asked Questions

Common questions about In4O6, answered from cross-validated data.

What is the band gap of In4O6?

In4O6 has a DFT-computed band gap of 0.22–0.96 eV across 13 reported structures.

More questions
Is In4O6 a metal, semiconductor, or insulator?
With a band gap up to 0.96 eV it is a semiconductor.
Is In4O6 thermodynamically stable?
Yes — In4O6 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of In4O6?
The lowest-energy reported polymorph of In4O6 is cubic symmetry, space group Ia-3 (No. 206).
What is the density of In4O6?
The computed density of the ground-state structure of In4O6 is 7.00 g/cm³.
How many polymorphs of In4O6 are known?
13 structures of In4O6 are reported across 3 databases, spanning 6 distinct space groups.
What elements does In4O6 contain?
In4O6 contains In and O (2 elements).
Where does the data for In4O6 come from?
In4O6 data is cross-referenced from materials_project, aflow, omat24.
Explore

Related Compounds

Other Wide-Bandgap Oxide Semiconductors in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
  • omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).

Analyze In4O6 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →