InO
InO is an indium-based oxide semiconductor that is typically found to be thermodynamically unstable compared to other oxides in the same chemical family.
About InO
InO is a semiconducting oxide that belongs to the broader class of wide-bandgap oxide semiconductors. While it shares elemental components with more common indium oxides, it represents a distinct stoichiometry that has been the subject of extensive structural investigation across materials databases.
Due to its position above the thermodynamic hull, this compound is generally considered unstable under standard conditions. Its study is primarily driven by the need to map the complex phase space of indium-oxygen systems and understand the fundamental electronic behavior of sub-oxides in this semiconductor family.
Key Properties
Cross-validated computational properties for InO, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of InO. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for InO, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| — | — | 0.80 | 0.0000 | -1.554 | — |
| P-6m2 (No. 187) | hexagonal | 0.40 | 0.2263 | -5.289 | 2.65 |
| — | — | 0.00 | 0.2399 | -1.314 | — |
| P63mc (No. 186) | hexagonal | 0.00 | 0.3106 | -5.205 | 6.05 |
| — | — | 0.00 | 0.3144 | -1.240 | — |
| — | — | 0.00 | 0.4833 | -1.071 | — |
| — | — | 0.00 | 0.4846 | -1.069 | — |
| — | — | 0.00 | 0.6291 | -0.925 | — |
| — | — | 0.00 | 0.9374 | -0.617 | — |
| — | — | 0.00 | 0.9476 | -0.606 | — |
| P1 (No. 1) | triclinic | — | — | — | 9.58 |
| P1 (No. 1) | triclinic | — | — | — | 6.43 |
Frequently Asked Questions
Common questions about InO, answered from cross-validated data.
What is InO?
InO is an indium-based oxide semiconductor that is typically found to be thermodynamically unstable compared to other oxides in the same chemical family.
What is the band gap of InO?
Is InO a metal, semiconductor, or insulator?
Is InO thermodynamically stable?
What is the crystal structure of InO?
What is the density of InO?
How many polymorphs of InO are known?
What elements does InO contain?
Where does the data for InO come from?
How It Compares
Within the wide-bandgap oxide semiconductors class.
In contrast to highly stable and widely utilized wide-bandgap semiconductors like ZnO or the more common In2O3, InO is characterized by its relative thermodynamic instability. While its siblings often serve as robust transparent conductive oxides or dielectric layers, InO remains a more elusive, theoretically intriguing member of the indium-oxygen system.
Related Compounds
Other Wide-Bandgap Oxide Semiconductors in the database.
Data sources & attribution
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
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