Ga2O3
Gallium oxide · Gallia
Gallium oxide is a stable, wide-bandgap semiconductor used primarily in high-power electronics and ultraviolet sensing technologies.
About Gallium oxide
Gallium oxide is a robust, thermodynamically stable oxide semiconductor that has garnered significant attention for its potential in high-power and high-voltage electronic applications. Its inherent physical properties allow it to operate under extreme conditions where traditional semiconductors might fail, making it a cornerstone material for future power-switching technologies.
Researchers have extensively characterized this material, with a vast number of reported structures across various databases. This structural diversity underscores its versatility in thin-film growth and device fabrication, positioning it as a critical component in the development of efficient energy conversion systems and advanced sensing hardware.
Key Properties
Cross-validated computational properties for Gallium oxide, aggregated across 5 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of Ga2O3. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for Ga2O3, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2/m (No. 12) | monoclinic | 2.01 | 0.0000 | -6.449 | 5.89 |
| R-3c (No. 167) | trigonal | 2.40 | 0.0114 | -6.438 | 6.42 |
| P1 (No. 1) | triclinic | 2.04 | 0.1470 | -6.302 | 4.77 |
| P1 (No. 1) | triclinic | 2.05 | 0.1568 | -6.292 | 4.63 |
| P1 (No. 1) | triclinic | 2.15 | 0.1671 | -6.282 | 4.74 |
| P1 (No. 1) | triclinic | 2.02 | 0.1746 | -6.274 | 4.73 |
| P1 (No. 1) | triclinic | 1.83 | 0.1865 | -6.263 | 4.91 |
| P1 (No. 1) | triclinic | 0.01 | 0.2170 | -6.232 | 5.49 |
| Cmcm (No. 63) | orthorhombic | 1.20 | 0.2841 | -6.165 | 6.45 |
| C2/c (No. 15) | monoclinic | 0.47 | 1.8805 | -4.568 | 3.12 |
| P-1 (No. 2) | Triclinic | — | — | — | 6.49 |
| P1 (No. 1) | Triclinic | — | — | — | 6.13 |
Synthesis Routes
Literature-extracted synthesis procedures targeting Ga2O3.
Applications
Where Gallium oxide is used.
Frequently Asked Questions
Common questions about Gallium oxide, answered from cross-validated data.
What is Ga2O3?
Gallium oxide is a stable, wide-bandgap semiconductor used primarily in high-power electronics and ultraviolet sensing technologies.
What is Ga2O3 used for?
What is the band gap of Ga2O3?
Is Ga2O3 a metal, semiconductor, or insulator?
Is Ga2O3 thermodynamically stable?
What is the crystal structure of Ga2O3?
What is the density of Ga2O3?
How many polymorphs of Ga2O3 are known?
How is Ga2O3 synthesized?
What elements does Ga2O3 contain?
Where does the data for Ga2O3 come from?
How It Compares
Within the wide-bandgap oxide semiconductors class.
Within the family of wide-bandgap oxide semiconductors, Ga2O3 is distinguished by its exceptionally large bandgap, which provides superior breakdown field strength compared to more conventional materials like ZnO or SnO2. While Al2O3 is typically utilized as a dielectric insulator, gallium oxide offers the unique advantage of being a semiconducting material that can be doped to achieve precise electrical conductivity, bridging the gap between insulators and standard semiconductors.
Related Compounds
Other Wide-Bandgap Oxide Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
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