Ge4Te4

Ge4Te4 has a DFT band gap of 0.48 eV across 5 reported structures in 3 space groups. Cross-validated across 1 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ge4Te4, aggregated across 1 database.

Band Gap

0.48 eV
Range across DFT structures

Energy Above Hull

—
Best (lowest) across sources

Stability

Not assessed

Structures

5
1 database, 3 space groups
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting Ge4Te4.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about Ge4Te4, answered from cross-validated data.

What is the band gap of Ge4Te4?

Ge4Te4 has a DFT-computed band gap of 0.48 eV across 5 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.

More questions
Is Ge4Te4 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.48 eV (a semiconductor). Measured gaps are typically larger.
How many polymorphs of Ge4Te4 are known?
5 structures of Ge4Te4 are reported across 1 database, spanning 3 distinct space groups.
How is Ge4Te4 synthesized?
Literature-reported routes for Ge4Te4 include solid state (3 procedures documented).
What elements does Ge4Te4 contain?
Ge4Te4 contains Ge and Te (2 elements).
Where does the data for Ge4Te4 come from?
Ge4Te4 data is cross-referenced from latticegraph.
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Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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