Ge2Sb2Te5

GST · GST-225

Ge2Sb2Te5 is a semiconducting phase-change alloy widely used for high-speed, non-volatile data storage applications.

Crystal structure of Ge2Sb2Te5 (trigonal, P-3m1 (No. 164))
Ground-state structure · Materials Project
Overview

About GST

Ge2Sb2Te5 is a prominent semiconducting phase-change material that plays a foundational role in non-volatile memory technologies. Its ability to undergo reversible structural transitions between disordered and ordered phases allows it to store information with high efficiency and reliability.

As a thermodynamically stable compound near the hull, it is highly synthesizable and widely utilized in data storage applications. Its unique electronic properties make it a cornerstone for researchers developing next-generation high-speed memory architectures.

At a glance

Key Properties

Cross-validated computational properties for GST, aggregated across 7 databases.

Band Gap

0.02–0.43 eV
Range across DFT structures · ground state: small gap

Energy Above Hull

0.005 eV/atom
Best (lowest) across sources

Stability

Near Hull
5 DFT sources

Structures

24
7 databases, 2 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Ge2Sb2Te5. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.93 / 1.00
Trust tier: high

Hull Spread

0.018 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Ge2Sb2Te5, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
——0.430.0048-0.106—
P-3m1 (No. 164)trigonal0.260.0118-4.0276.24
——0.210.0199-0.091—
P-3m1 (No. 164)trigonal0.040.0224-0.099—
P-3m1 (No. 164)trigonal0.000.0232-4.0166.01
Cm (No. 8)monoclinic0.000.0430-0.079—
Cm (No. 8)monoclinic0.020.0541-3.9855.94
P-3m1 (No. 164)trigonal0.00—-3.7546.04
P-3m1 (No. 164)trigonal0.00—-3.7546.04
P-3m1 (No. 164)trigonal———6.32
P-3m1 (No. 164)trigonal———6.27
Cm (No. 8)monoclinic———5.94
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting Ge2Sb2Te5.

Solid State
Procedure available · ceder_solid_state
Uses

Applications

Where GST is used.

Phase-change random access memoryOptical data storageNeuromorphic computing hardware
Reference

Frequently Asked Questions

Common questions about GST, answered from cross-validated data.

What is Ge2Sb2Te5?

Ge2Sb2Te5 is a semiconducting phase-change alloy widely used for high-speed, non-volatile data storage applications.

More questions
What is Ge2Sb2Te5 used for?
GST (Ge2Sb2Te5) is used in phase-change random access memory, optical data storage, and neuromorphic computing hardware.
What is the band gap of Ge2Sb2Te5?
GST (Ge2Sb2Te5) has a DFT-computed band gap of 0.02–0.43 eV across 24 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Ge2Sb2Te5 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.43 eV (a semiconductor). Measured gaps are typically larger.
Is Ge2Sb2Te5 thermodynamically stable?
GST (Ge2Sb2Te5) has a lowest energy above hull of 0.005 eV/atom (near hull).
What is the crystal structure of Ge2Sb2Te5?
The reference structure of GST (Ge2Sb2Te5) is trigonal symmetry, space group P-3m1 (No. 164).
What is the density of Ge2Sb2Te5?
The computed density of the ground-state structure of GST (Ge2Sb2Te5) is 6.24 g/cm³.
How many polymorphs of Ge2Sb2Te5 are known?
24 structures of Ge2Sb2Te5 are reported across 7 databases, spanning 2 distinct space groups.
How is Ge2Sb2Te5 synthesized?
Literature-reported routes for Ge2Sb2Te5 include solid state.
What elements does Ge2Sb2Te5 contain?
GST (Ge2Sb2Te5) contains Ge, Sb, and Te (3 elements).
Where does the data for Ge2Sb2Te5 come from?
Ge2Sb2Te5 data is cross-referenced from oqmd, materials_project, jarvis, aflow, cod, mpaloe, nomad.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the family of phase-change memory materials, Ge2Sb2Te5 is arguably the most extensively studied and optimized member, often serving as the benchmark for performance against simpler binary counterparts like GeTe or Sb2Te3. While materials like AgSbTe2 are explored for specific thermoelectric or phase-change tuning, Ge2Sb2Te5 remains the industry standard due to its balanced switching kinetics and structural stability.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • aflow — Data from AFLOW (aflow.org). Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
  • nomad — Data from NOMAD (nomad-lab.eu). Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019). (CC-BY-4.0)

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