SbTe

SbTe is a metallic, synthesizable phase-change material used in the research and development of high-performance non-volatile memory technologies.

Crystal structure of SbTe (trigonal, P-3m1 (No. 164))
Ground-state structure · Materials Project
Overview

About SbTe

SbTe is a metallic compound within the phase-change memory material class, characterized by its structural flexibility and proximity to thermodynamic stability. Its metallic electronic nature distinguishes it from many semiconducting chalcogenides, making it a compelling subject for studying phase transition kinetics in thin-film devices.

This material is primarily investigated for its role in high-speed data storage technologies. Given its ability to exist in numerous structural configurations, it serves as a critical candidate for researchers aiming to optimize the switching performance and endurance of non-volatile memory architectures.

At a glance

Key Properties

Cross-validated computational properties for SbTe, aggregated across 4 databases.

Band Gap

0.08–0.33 eV
Range across DFT structures · ground state: metal

Energy Above Hull

0.002 eV/atom
Best (lowest) across sources

Stability

Near Hull
3 DFT sources

Structures

32
4 databases, 9 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of SbTe. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.97 / 1.00
Trust tier: high

Hull Spread

0.006 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for SbTe, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P-3m1 (No. 164)trigonal0.080.0023-0.107—
——0.330.0030-0.104—
P-3m1 (No. 164)trigonal0.000.0087-3.9506.20
Fm-3m (No. 225)cubic0.000.11160.003—
——0.000.12050.013—
——0.000.12480.018—
R-3m (No. 166)trigonal0.000.1447-3.8146.69
——0.000.22550.119—
——0.000.29290.186—
——0.000.29300.186—
Pm-3m (No. 221)cubic0.000.3086-3.6507.39
——0.000.31290.206—
Uses

Applications

Where SbTe is used.

Phase-change memory device researchNon-volatile data storageNeuromorphic computing hardware
Reference

Frequently Asked Questions

Common questions about SbTe, answered from cross-validated data.

What is SbTe?

SbTe is a metallic, synthesizable phase-change material used in the research and development of high-performance non-volatile memory technologies.

More questions
What is SbTe used for?
SbTe is used in phase-change memory device research, non-volatile data storage, and neuromorphic computing hardware.
What is the band gap of SbTe?
SbTe has a DFT-computed band gap of 0.08–0.33 eV across 32 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is SbTe a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.33 eV (a semiconductor). Measured gaps are typically larger.
Is SbTe thermodynamically stable?
SbTe has a lowest energy above hull of 0.002 eV/atom (near hull).
What is the crystal structure of SbTe?
The reference structure of SbTe is trigonal symmetry, space group P-3m1 (No. 164).
How many polymorphs of SbTe are known?
32 structures of SbTe are reported across 4 databases, spanning 9 distinct space groups.
What elements does SbTe contain?
SbTe contains Sb and Te (2 elements).
Where does the data for SbTe come from?
SbTe data is cross-referenced from jarvis, oqmd, materials_project, mpaloe.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the landscape of phase-change materials, SbTe occupies a unique niche compared to more common binary systems like Sb2Te3 or GeTe. While GeTe is widely recognized for its robust switching properties in industrial memory applications, SbTe offers a different electronic profile that provides researchers with a broader design space for tuning the metallic-to-insulating transition behaviors essential for advanced memory cells.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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