In2Te3
In2Te3 is a semiconducting chalcogenide compound being researched for its potential as a phase-change material in next-generation electronic memory devices.
About In2Te3
In2Te3 is a semiconducting compound belonging to the class of phase-change memory materials. As a near-hull stable phase, it is considered a promising candidate for experimental synthesis and investigation within advanced electronic systems. Its electronic character makes it a subject of significant interest for researchers mapping the landscape of chalcogenide-based memory devices. The material is characterized by a high degree of structural diversity, supported by numerous reported configurations across major materials databases. This structural flexibility is a hallmark of its class, suggesting potential for tuning its properties to meet specific device requirements in non-volatile memory applications.
Key Properties
Cross-validated computational properties for In2Te3, aggregated across 5 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for In2Te3, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Imm2 (No. 44) | orthorhombic | 0.14 | 0.0047 | -24.724 | 5.26 |
| F-43m (No. 216) | cubic | 0.00 | 0.0419 | -24.686 | 5.36 |
| R-3m (No. 166) | trigonal | 0.00 | 0.0673 | -24.661 | 6.34 |
| P3m1 (No. 156) | trigonal | 0.00 | 0.2133 | -24.515 | 5.29 |
| I4mm (No. 107) | tetragonal | 0.00 | 0.3078 | -24.421 | 4.60 |
| C2/m (No. 12) | Monoclinic | — | — | — | 4.93 |
| — | — | — | — | — | 6.41 |
| R-3m (No. 166) | — | — | — | — | — |
| R-3m (No. 166) | — | — | — | — | — |
| P-3m1 (No. 164) | — | — | — | — | — |
| Pm (No. 6) | Monoclinic | — | — | — | 5.09 |
| Pm (No. 6) | Monoclinic | — | — | — | 5.50 |
Applications
Where In2Te3 is used.
Frequently Asked Questions
Common questions about In2Te3, answered from cross-validated data.
What is In2Te3?
In2Te3 is a semiconducting chalcogenide compound being researched for its potential as a phase-change material in next-generation electronic memory devices.
What is In2Te3 used for?
What is the band gap of In2Te3?
Is In2Te3 a metal, semiconductor, or insulator?
Is In2Te3 thermodynamically stable?
What is the crystal structure of In2Te3?
What is the density of In2Te3?
How many polymorphs of In2Te3 are known?
What elements does In2Te3 contain?
Where does the data for In2Te3 come from?
How It Compares
Within the phase-change memory materials class.
Within the broader family of phase-change materials, In2Te3 occupies a distinct niche compared to well-established systems like GeTe or Ge2Sb2Te5. While GeTe is renowned for its rapid switching kinetics and high contrast in optical and electrical properties, In2Te3 offers a different structural framework that contributes to the ongoing search for materials with improved thermal stability and lower power consumption for memory cells.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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