InTe
InTe is a metastable metallic compound used in the study and development of phase-change memory technologies.
About InTe
InTe is a binary compound belonging to the class of phase-change memory materials. As a metallic system, it exhibits distinct electronic behavior compared to the semiconducting members of its family, making it a subject of significant interest for fundamental studies in structural transformation and phase stability.
Despite its metastable nature, the compound has been extensively characterized, with numerous reported structures across major databases. This structural diversity highlights its complex potential for applications in data storage, where the ability to transition between phases is critical for high-speed memory performance.
Key Properties
Cross-validated computational properties for InTe, aggregated across 5 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of InTe. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for InTe, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| — | — | 0.61 | 0.0000 | -0.347 | — |
| Fm-3m (No. 225) | cubic | 0.00 | 0.0000 | -0.313 | — |
| I4/mcm (No. 140) | tetragonal | 0.00 | 0.0087 | -0.305 | — |
| Fm-3m (No. 225) | cubic | 0.00 | 0.0357 | -24.386 | 6.63 |
| I4/mcm (No. 140) | tetragonal | 0.00 | 0.0386 | -24.383 | 6.02 |
| — | — | 0.00 | 0.0502 | -0.297 | — |
| — | — | 0.00 | 0.0557 | -0.291 | — |
| — | — | 0.00 | 0.1226 | -0.225 | — |
| — | — | 0.00 | 0.1609 | -0.186 | — |
| Pm-3m (No. 221) | cubic | 0.00 | 0.2085 | -0.105 | — |
| — | — | 0.00 | 0.2098 | -0.137 | — |
| Pm-3m (No. 221) | cubic | 0.00 | 0.2181 | -24.203 | 6.88 |
Applications
Where InTe is used.
Frequently Asked Questions
Common questions about InTe, answered from cross-validated data.
What is InTe?
InTe is a metastable metallic compound used in the study and development of phase-change memory technologies.
What is InTe used for?
What is the band gap of InTe?
Is InTe a metal, semiconductor, or insulator?
Is InTe thermodynamically stable?
What is the crystal structure of InTe?
How many polymorphs of InTe are known?
What elements does InTe contain?
Where does the data for InTe come from?
How It Compares
Within the phase-change memory materials class.
Unlike the widely utilized GeTe or the classic Sb2Te3 phase-change materials which typically function as semiconductors, InTe is characterized by its metallic electronic nature. This distinction places it in a unique subset of the class, offering a different pathway for structural switching compared to the more conventional chalcogenide alloys like Ge2Sb2Te5.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
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