AlInN2
Aluminum indium nitride · AlInN
Aluminum indium nitride is a ternary semiconductor alloy composed of aluminum, indium, and nitrogen. It is primarily utilized in optoelectronics and high-frequency electronics due to its tunable electronic properties and structural compatibility with other nitride-based materials.
Key Properties
Cross-validated computational properties for Aluminum indium nitride, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for AlInN2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pna21 (No. 33) | orthorhombic | 1.52 | 0.0174 | -12.773 | 5.40 |
| I-42d (No. 122) | tetragonal | 1.63 | 0.0357 | -12.755 | 5.40 |
| Pbca (No. 61) | orthorhombic | 1.26 | 0.1540 | -12.637 | 5.31 |
| — | — | — | — | — | 5.32 |
| Pna21 (No. 33) | — | — | — | — | — |
| I-42d (No. 122) | — | — | — | — | — |
Applications
Where Aluminum indium nitride is used.
Frequently Asked Questions
Common questions about Aluminum indium nitride, answered from cross-validated data.
What is AlInN2?
Aluminum indium nitride is a ternary semiconductor alloy composed of aluminum, indium, and nitrogen. It is primarily utilized in optoelectronics and high-frequency electronics due to its tunable electronic properties and structural compatibility with other nitride-based materials.
What is AlInN2 used for?
What is the band gap of AlInN2?
Is AlInN2 a metal, semiconductor, or insulator?
Is AlInN2 thermodynamically stable?
What is the crystal structure of AlInN2?
What is the density of AlInN2?
How many polymorphs of AlInN2 are known?
What elements does AlInN2 contain?
Where does the data for AlInN2 come from?
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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