AlInN2

AlInN2 is a semiconducting ternary nitride material that is considered a promising candidate for synthesis and integration into advanced semiconductor devices.

Crystal structure of AlInN2 (orthorhombic, Pna21 (No. 33))
Ground-state structure · Materials Project
Overview

About AlInN2

AlInN2 is a ternary nitride semiconductor that sits near the thermodynamic stability hull, suggesting it is a viable candidate for experimental synthesis. As a member of the broader nitride family, it bridges the electronic properties of its constituent binary components, providing a tunable platform for semiconductor device design.

Its semiconducting nature makes it a subject of interest for researchers looking to expand the library of nitride-based materials. With multiple structural configurations reported in databases, it represents a versatile building block for advanced thin-film technologies and specialized electronic components.

At a glance

Key Properties

Cross-validated computational properties for AlInN2, aggregated across 4 databases.

Band Gap

1.20–1.63 eV
Range across DFT structures · ground state: wide gap

Energy Above Hull

0.015 eV/atom
Best (lowest) across sources

Stability

Near Hull
3 DFT sources

Structures

7
4 databases, 3 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of AlInN2. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.55 / 1.00
Trust tier: low

Hull Spread

0.111 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for AlInN2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
Pna21 (No. 33)orthorhombic1.580.0155-0.814—
Pna21 (No. 33)orthorhombic1.520.0174-12.7735.40
I-42d (No. 122)tetragonal1.630.0357-12.7555.40
I-42d (No. 122)tetragonal1.530.0432-0.787—
——1.200.1269-0.638—
Pbca (No. 61)orthorhombic1.260.1540-12.6375.31
—————5.32
Uses

Applications

Where AlInN2 is used.

OptoelectronicsHigh-frequency electronicsSemiconductor heterostructures
Reference

Frequently Asked Questions

Common questions about AlInN2, answered from cross-validated data.

What is AlInN2?

AlInN2 is a semiconducting ternary nitride material that is considered a promising candidate for synthesis and integration into advanced semiconductor devices.

More questions
What is AlInN2 used for?
AlInN2 is used in optoelectronics, high-frequency electronics, and semiconductor heterostructures.
What is the band gap of AlInN2?
AlInN2 has a DFT-computed band gap of 1.20–1.63 eV across 7 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is AlInN2 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 1.63 eV (a semiconductor). Measured gaps are typically larger.
Is AlInN2 thermodynamically stable?
AlInN2 has a lowest energy above hull of 0.015 eV/atom (near hull).
What is the crystal structure of AlInN2?
The reference structure of AlInN2 is orthorhombic symmetry, space group Pna21 (No. 33).
How many polymorphs of AlInN2 are known?
7 structures of AlInN2 are reported across 4 databases, spanning 3 distinct space groups.
What elements does AlInN2 contain?
AlInN2 contains Al, In, and N (3 elements).
Where does the data for AlInN2 come from?
AlInN2 data is cross-referenced from jarvis, materials_project, oqmd, omat24.
Comparison

How It Compares

Within the nitride semiconductors class.

Within the family of nitride semiconductors, AlInN2 serves as a complex ternary alternative to the well-established binary standards like AlN, GaN, and InN. While GaN remains the industry benchmark for power electronics, AlInN2 offers a distinct compositional space that allows for the fine-tuning of lattice parameters and electronic properties, positioning it as a specialized material for heterostructure engineering.

Explore

Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • omat24 — Data from Meta Open Materials 2024 (OMat24), Meta FAIR. Cite: Barroso-Luque et al., arXiv:2410.12771 (2024). (CC-BY-4.0)

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