YAl2N3
Yttrium aluminum nitride is a ternary ceramic material known for its structural stability and potential as a wide-bandgap semiconductor. It is primarily investigated for its utility in optoelectronic devices and high-frequency electronics due to its favorable physical properties.
Key Properties
Cross-validated computational properties for YAl2N3, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for YAl2N3, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmc21 (No. 36) | orthorhombic | 2.27 | 0.0943 | -11.886 | 4.04 |
| Cmc21 (No. 36) | Orthorhombic | — | — | — | 4.04 |
| Cmc21 (No. 36) | Orthorhombic | — | — | — | 4.21 |
| Cmc21 (No. 36) | Orthorhombic | — | — | — | 4.13 |
| Cmc21 (No. 36) | — | — | — | — | — |
Applications
Where YAl2N3 is used.
Frequently Asked Questions
Common questions about YAl2N3, answered from cross-validated data.
What is YAl2N3?
Yttrium aluminum nitride is a ternary ceramic material known for its structural stability and potential as a wide-bandgap semiconductor. It is primarily investigated for its utility in optoelectronic devices and high-frequency electronics due to its favorable physical properties.
What is YAl2N3 used for?
What is the band gap of YAl2N3?
Is YAl2N3 a metal, semiconductor, or insulator?
Is YAl2N3 thermodynamically stable?
What is the crystal structure of YAl2N3?
What is the density of YAl2N3?
How many polymorphs of YAl2N3 are known?
What elements does YAl2N3 contain?
Where does the data for YAl2N3 come from?
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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