B4N4

B4N4 has a DFT band gap of 0.05–5.77 eV across 44 reported structures in 17 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for B4N4, aggregated across 4 databases.

Band Gap

0.05–5.77 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

44
4 databases, 17 space groups
Reference

Frequently Asked Questions

Common questions about B4N4, answered from cross-validated data.

What is the band gap of B4N4?

B4N4 has a DFT-computed band gap of 0.05–5.77 eV across 44 reported structures.

More questions
Is B4N4 a metal, semiconductor, or insulator?
With a wide band gap up to 5.77 eV it is an insulator / wide-band-gap material.
Is B4N4 thermodynamically stable?
Yes — B4N4 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of B4N4 are known?
44 structures of B4N4 are reported across 4 databases, spanning 17 distinct space groups.
What elements does B4N4 contain?
B4N4 contains B and N (2 elements).
Where does the data for B4N4 come from?
B4N4 data is cross-referenced from latticegraph.
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Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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