B8N8

B8N8 has a DFT band gap of 0.05–5.77 eV across 41 reported structures in 15 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for B8N8, aggregated across 4 databases.

Band Gap

0.05–5.77 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

41
4 databases, 15 space groups
Reference

Frequently Asked Questions

Common questions about B8N8, answered from cross-validated data.

What is the band gap of B8N8?

B8N8 has a DFT-computed band gap of 0.05–5.77 eV across 41 reported structures.

More questions
Is B8N8 a metal, semiconductor, or insulator?
With a wide band gap up to 5.77 eV it is an insulator / wide-band-gap material.
Is B8N8 thermodynamically stable?
Yes — B8N8 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of B8N8 are known?
41 structures of B8N8 are reported across 4 databases, spanning 15 distinct space groups.
What elements does B8N8 contain?
B8N8 contains B and N (2 elements).
Where does the data for B8N8 come from?
B8N8 data is cross-referenced from latticegraph.
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Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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