Ga32N32

Ga32N32 has a DFT band gap of 0.02–1.73 eV across 48 reported structures in 7 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ga32N32, aggregated across 4 databases.

Band Gap

0.02–1.73 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

48
4 databases, 7 space groups
Reference

Frequently Asked Questions

Common questions about Ga32N32, answered from cross-validated data.

What is the band gap of Ga32N32?

Ga32N32 has a DFT-computed band gap of 0.02–1.73 eV across 48 reported structures.

More questions
Is Ga32N32 a metal, semiconductor, or insulator?
With a band gap up to 1.73 eV it is a semiconductor.
Is Ga32N32 thermodynamically stable?
Yes — Ga32N32 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Ga32N32 are known?
48 structures of Ga32N32 are reported across 4 databases, spanning 7 distinct space groups.
What elements does Ga32N32 contain?
Ga32N32 contains Ga and N (2 elements).
Where does the data for Ga32N32 come from?
Ga32N32 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other III-V Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze Ga32N32 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →