Sr3In3N5
Sr3In3N5 is a complex ternary nitride semiconductor characterized by its unique strontium-indium-nitrogen framework.
About Sr3In3N5
Sr3In3N5 is a complex ternary nitride semiconductor that incorporates strontium and indium into a nitrogen-based framework. Its structural configuration reflects the intricate bonding environments found in advanced nitride materials, which are of significant interest for potential optoelectronic and semiconductor applications.
While the material exhibits semiconducting characteristics, it is currently classified as being above the thermodynamic hull, suggesting it may be metastable under standard conditions. Despite this, its presence in multiple structural databases highlights its importance as a subject of ongoing theoretical and experimental investigation in materials science.
Key Properties
Cross-validated computational properties for Sr3In3N5, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Sr3In3N5, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 0.45 | 0.1598 | -5.404 | 5.52 |
| P-1 (No. 2) | Triclinic | — | — | — | 5.52 |
| P-1 (No. 2) | Triclinic | — | — | — | 5.74 |
| P-1 (No. 2) | Triclinic | — | — | — | 5.65 |
| P-1 (No. 2) | — | — | — | — | — |
Applications
Where Sr3In3N5 is used.
Frequently Asked Questions
Common questions about Sr3In3N5, answered from cross-validated data.
What is Sr3In3N5?
Sr3In3N5 is a complex ternary nitride semiconductor characterized by its unique strontium-indium-nitrogen framework.
What is Sr3In3N5 used for?
What is the band gap of Sr3In3N5?
Is Sr3In3N5 a metal, semiconductor, or insulator?
Is Sr3In3N5 thermodynamically stable?
What is the crystal structure of Sr3In3N5?
What is the density of Sr3In3N5?
How many polymorphs of Sr3In3N5 are known?
What elements does Sr3In3N5 contain?
Where does the data for Sr3In3N5 come from?
How It Compares
Within the nitride semiconductors class.
Unlike the highly stable and widely utilized binary nitrides such as GaN and InN, which serve as the foundation for modern light-emitting diodes and power electronics, Sr3In3N5 represents a more exotic and complex structural arrangement. While siblings like BN and AlN are recognized for their robust stability and industrial utility, Sr3In3N5 is a more specialized, less conventional member of the nitride semiconductor class.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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