N8Si4Zn4
N8Si4Zn4 is a thermodynamically stable ternary nitride semiconductor that functions as a wide-gap insulator.
About N8Si4Zn4
N8Si4Zn4 is a complex nitride semiconductor characterized by its wide-gap insulating electronic profile. As a material that resides on the convex hull, it exhibits significant thermodynamic stability, making it a robust candidate for structural and electronic investigations within the broader family of nitride materials.
This compound is of particular interest to researchers exploring multi-element nitrides where silicon and zinc are integrated into a stable lattice. Its unique composition allows for the potential tuning of properties that are essential for next-generation semiconductor devices and specialized dielectric applications.
Key Properties
Cross-validated computational properties for N8Si4Zn4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for N8Si4Zn4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pna21 (No. 33) | orthorhombic | 3.19 | 0.0000 | -9.980 | 4.90 |
| Cmce (No. 64) | orthorhombic | 0.49 | 0.4600 | -9.520 | 4.45 |
| — | — | — | — | — | 4.00 |
| Pna21 (No. 33) | — | — | — | — | — |
Applications
Where N8Si4Zn4 is used.
Frequently Asked Questions
Common questions about N8Si4Zn4, answered from cross-validated data.
What is N8Si4Zn4?
N8Si4Zn4 is a thermodynamically stable ternary nitride semiconductor that functions as a wide-gap insulator.
What is N8Si4Zn4 used for?
What is the band gap of N8Si4Zn4?
Is N8Si4Zn4 a metal, semiconductor, or insulator?
Is N8Si4Zn4 thermodynamically stable?
What is the crystal structure of N8Si4Zn4?
What is the density of N8Si4Zn4?
How many polymorphs of N8Si4Zn4 are known?
What elements does N8Si4Zn4 contain?
Where does the data for N8Si4Zn4 come from?
How It Compares
Within the nitride semiconductors class.
Unlike the more commonly studied binary nitrides such as GaN or AlN, N8Si4Zn4 represents a more complex ternary arrangement. While GaN and InN are widely utilized for their specific optoelectronic properties, N8Si4Zn4 offers a distinct structural configuration that expands the design space for nitride-based semiconductors, positioning it as a specialized alternative to traditional binary systems.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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