N8Si4Sr4
N8Si4Sr4 is a thermodynamically stable nitride semiconductor composed of nitrogen, silicon, and strontium.
About N8Si4Sr4
N8Si4Sr4 is a complex nitride semiconductor that occupies a stable position on the convex hull, indicating significant structural integrity. As a member of the nitride semiconductor class, it features a unique arrangement of nitrogen, silicon, and strontium atoms that dictates its electronic behavior.
This compound is of interest to researchers investigating novel semiconducting materials with potential for specialized electronic applications. Its thermodynamic stability makes it a reliable subject for structural analysis and performance modeling within the broader landscape of nitride-based materials.
Key Properties
Cross-validated computational properties for N8Si4Sr4, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for N8Si4Sr4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/c (No. 14) | monoclinic | 2.97 | 0.0000 | -11.954 | 4.32 |
| P21/c (No. 14) | — | — | — | — | — |
| P21/c (No. 14) | — | — | — | — | — |
| — | — | — | — | — | 3.23 |
| P21/c (No. 14) | monoclinic | — | — | — | 1.09 |
Applications
Where N8Si4Sr4 is used.
Frequently Asked Questions
Common questions about N8Si4Sr4, answered from cross-validated data.
What is N8Si4Sr4?
N8Si4Sr4 is a thermodynamically stable nitride semiconductor composed of nitrogen, silicon, and strontium.
What is N8Si4Sr4 used for?
What is the band gap of N8Si4Sr4?
Is N8Si4Sr4 a metal, semiconductor, or insulator?
Is N8Si4Sr4 thermodynamically stable?
What is the crystal structure of N8Si4Sr4?
What is the density of N8Si4Sr4?
How many polymorphs of N8Si4Sr4 are known?
What elements does N8Si4Sr4 contain?
Where does the data for N8Si4Sr4 come from?
How It Compares
Within the nitride semiconductors class.
Unlike the widely utilized binary nitride semiconductors such as GaN or AlN, which are foundational to modern optoelectronics, N8Si4Sr4 represents a more complex, multi-element system. While compounds like BN and InN are frequently studied for their specific wide-gap or narrow-gap characteristics, N8Si4Sr4 offers a distinct structural complexity that sets it apart from the simpler binary and ternary nitrides in its class.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
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