N6Na2Si4
N6Na2Si4 is a stable, wide-gap insulating ternary nitride semiconductor composed of sodium, silicon, and nitrogen.
About N6Na2Si4
N6Na2Si4 is a thermodynamically stable compound within the nitride semiconductor family. Its electronic character as a wide-gap insulator distinguishes it from more conductive metallic nitrides, positioning it as a specialized material for potential dielectric or optoelectronic applications.
As a ternary phase, it represents a complex structural arrangement of sodium, silicon, and nitrogen. Its presence on the convex hull confirms its inherent stability, making it a reliable subject for researchers exploring novel semiconductor architectures beyond traditional binary systems.
Key Properties
Cross-validated computational properties for N6Na2Si4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for N6Na2Si4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cmc21 (No. 36) | orthorhombic | 4.18 | 0.0000 | -9.338 | 3.18 |
| — | — | — | — | — | 1.82 |
| Cmc21 (No. 36) | — | — | — | — | — |
Applications
Where N6Na2Si4 is used.
Frequently Asked Questions
Common questions about N6Na2Si4, answered from cross-validated data.
What is N6Na2Si4?
N6Na2Si4 is a stable, wide-gap insulating ternary nitride semiconductor composed of sodium, silicon, and nitrogen.
What is N6Na2Si4 used for?
What is the band gap of N6Na2Si4?
Is N6Na2Si4 a metal, semiconductor, or insulator?
Is N6Na2Si4 thermodynamically stable?
What is the crystal structure of N6Na2Si4?
What is the density of N6Na2Si4?
How many polymorphs of N6Na2Si4 are known?
What elements does N6Na2Si4 contain?
Where does the data for N6Na2Si4 come from?
How It Compares
Within the nitride semiconductors class.
Unlike the widely utilized binary semiconductors such as GaN or AlN, which are primarily valued for their direct band-gap properties in high-frequency electronics, N6Na2Si4 offers a more complex structural chemistry. While BN is celebrated for its extreme thermal and mechanical robustness, N6Na2Si4 provides a distinct chemical landscape that expands the diversity of the nitride semiconductor class, moving away from simple III-V configurations toward more intricate ternary frameworks.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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