InGaN2
InGaN2 is a metastable ternary nitride semiconductor used in the study of advanced optoelectronic materials.
About InGaN2
InGaN2 is a complex nitride semiconductor composed of indium, gallium, and nitrogen. As a metastable phase, it represents a unique structural configuration within the broader family of group-III nitrides, offering distinct electronic properties that arise from the interplay of its constituent elements.
This material is of significant interest for researchers investigating tunable band structures and high-performance optoelectronic devices. Its existence as a metastable compound highlights the intricate synthesis challenges and potential for specialized applications in semiconductor engineering.
Key Properties
Cross-validated computational properties for InGaN2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for InGaN2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P3m1 (No. 156) | trigonal | 0.23 | 0.0772 | -13.386 | 6.35 |
| P3m1 (No. 156) | — | — | — | — | — |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.35 |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.71 |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.53 |
Applications
Where InGaN2 is used.
Frequently Asked Questions
Common questions about InGaN2, answered from cross-validated data.
What is InGaN2?
InGaN2 is a metastable ternary nitride semiconductor used in the study of advanced optoelectronic materials.
What is InGaN2 used for?
What is the band gap of InGaN2?
Is InGaN2 a metal, semiconductor, or insulator?
Is InGaN2 thermodynamically stable?
What is the crystal structure of InGaN2?
What is the density of InGaN2?
How many polymorphs of InGaN2 are known?
What elements does InGaN2 contain?
Where does the data for InGaN2 come from?
How It Compares
Within the nitride semiconductors class.
Within the group-III nitride class, InGaN2 occupies a specialized niche compared to the highly stable and widely utilized binary compounds like GaN, InN, and AlN. While those binary members serve as the foundational building blocks for modern light-emitting technology, InGaN2 represents a more complex, metastable variation that provides a different structural landscape for exploring ternary nitride behavior.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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