InGa3N4
InGa3N4 is a metastable semiconducting compound composed of indium, gallium, and nitrogen.
About InGa3N4
InGa3N4 is a semiconducting material belonging to the group of nitride semiconductors. As a metastable compound, it represents a complex phase within the III-V nitride family, offering unique structural arrangements that distinguish it from more conventional binary nitrides.
This compound is of interest to researchers investigating the tunable electronic properties of mixed-cation nitrides. Its existence across multiple reported structures highlights the diverse bonding environments possible when combining indium and gallium within a nitrogen-based lattice.
Key Properties
Cross-validated computational properties for InGa3N4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for InGa3N4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P3m1 (No. 156) | trigonal | 0.58 | 0.0597 | -12.150 | 6.16 |
| P3m1 (No. 156) | — | — | — | — | — |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.16 |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.51 |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.34 |
Applications
Where InGa3N4 is used.
Frequently Asked Questions
Common questions about InGa3N4, answered from cross-validated data.
What is InGa3N4?
InGa3N4 is a metastable semiconducting compound composed of indium, gallium, and nitrogen.
What is InGa3N4 used for?
What is the band gap of InGa3N4?
Is InGa3N4 a metal, semiconductor, or insulator?
Is InGa3N4 thermodynamically stable?
What is the crystal structure of InGa3N4?
What is the density of InGa3N4?
How many polymorphs of InGa3N4 are known?
What elements does InGa3N4 contain?
Where does the data for InGa3N4 come from?
How It Compares
Within the nitride semiconductors class.
While binary compounds like GaN and InN serve as the industry standard for high-performance optoelectronics, InGa3N4 occupies a more specialized niche as a metastable ternary phase. Unlike the highly stable and widely utilized AlN or BN, this compound exhibits a more complex structural landscape, reflecting the challenges and opportunities in synthesizing multi-cation nitride semiconductors.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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