In3GaN4
In3GaN4 is a near-zero-gap nitride semiconductor that is considered thermodynamically stable enough to be a candidate for laboratory synthesis.
About In3GaN4
In3GaN4 is an intriguing member of the nitride semiconductor family, characterized by its near-zero-gap electronic structure. Its proximity to the thermodynamic hull suggests that it is a viable candidate for experimental synthesis and further materials characterization. As a complex nitride, it represents a departure from the traditional wide-gap binary nitrides. Its unique electronic profile makes it a subject of interest for researchers investigating non-traditional semiconductor behavior in nitrogen-based systems.
Key Properties
Cross-validated computational properties for In3GaN4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for In3GaN4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P63mc (No. 186) | hexagonal | 0.08 | 0.0216 | -14.696 | 6.55 |
| P3m1 (No. 156) | trigonal | 0.00 | 0.0562 | -14.661 | 6.51 |
| P3m1 (No. 156) | — | — | — | — | — |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.51 |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.69 |
| P63mc (No. 186) | Hexagonal | — | — | — | 6.92 |
| P3m1 (No. 156) | Trigonal | — | — | — | 6.83 |
| P63mc (No. 186) | Hexagonal | — | — | — | 6.55 |
| P63mc (No. 186) | Hexagonal | — | — | — | 6.74 |
| P63mc (No. 186) | — | — | — | — | — |
Applications
Where In3GaN4 is used.
Frequently Asked Questions
Common questions about In3GaN4, answered from cross-validated data.
What is In3GaN4?
In3GaN4 is a near-zero-gap nitride semiconductor that is considered thermodynamically stable enough to be a candidate for laboratory synthesis.
What is In3GaN4 used for?
What is the band gap of In3GaN4?
Is In3GaN4 a metal, semiconductor, or insulator?
Is In3GaN4 thermodynamically stable?
What is the crystal structure of In3GaN4?
What is the density of In3GaN4?
How many polymorphs of In3GaN4 are known?
What elements does In3GaN4 contain?
Where does the data for In3GaN4 come from?
How It Compares
Within the nitride semiconductors class.
Unlike the well-known wide-gap insulators such as BN and AlN, or the standard semiconductors like GaN and InN, In3GaN4 occupies a distinct niche due to its semimetallic character. While many members of this class are valued for their transparency and optoelectronic utility, In3GaN4 offers a different electronic landscape, providing a specialized alternative to the more common binary nitrides like GaN.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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