H18N2Si6
H18N2Si6 is a hydrogenated silicon nitride semiconductor that acts as a wide-gap insulator with potential for specialized electronic device applications.
About H18N2Si6
H18N2Si6 belongs to the class of nitride semiconductors, characterized by its wide-gap insulating electronic profile. Its structural composition suggests it functions as a specialized dielectric or precursor material within semiconductor manufacturing environments.
As a near-hull compound, it is considered a viable candidate for experimental synthesis. Its unique arrangement of hydrogen, nitrogen, and silicon atoms positions it as an intriguing subject for research into novel thin-film insulators and passivating layers.
Key Properties
Cross-validated computational properties for H18N2Si6, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for H18N2Si6, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 4.18 | 0.0218 | -5.282 | 0.99 |
| — | — | — | — | — | 0.89 |
| P-1 (No. 2) | — | — | — | — | — |
Applications
Where H18N2Si6 is used.
Frequently Asked Questions
Common questions about H18N2Si6, answered from cross-validated data.
What is H18N2Si6?
H18N2Si6 is a hydrogenated silicon nitride semiconductor that acts as a wide-gap insulator with potential for specialized electronic device applications.
What is H18N2Si6 used for?
What is the band gap of H18N2Si6?
Is H18N2Si6 a metal, semiconductor, or insulator?
Is H18N2Si6 thermodynamically stable?
What is the crystal structure of H18N2Si6?
What is the density of H18N2Si6?
How many polymorphs of H18N2Si6 are known?
What elements does H18N2Si6 contain?
Where does the data for H18N2Si6 come from?
How It Compares
Within the nitride semiconductors class.
Unlike well-established industrial semiconductors such as GaN or AlN, which are widely utilized for their optoelectronic properties, H18N2Si6 represents a more complex, hydrogen-rich structural variant within the broader nitride family. While binary nitrides like BN provide high thermal stability, this compound offers a distinct chemical architecture that may provide unique surface-termination or insulating characteristics not found in simpler systems like InN.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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