H18N2Si6

H18N2Si6 is a hydrogenated silicon nitride semiconductor that acts as a wide-gap insulator with potential for specialized electronic device applications.

Crystal structure of H18N2Si6
Ground-state structure · Materials Project
Overview

About H18N2Si6

H18N2Si6 belongs to the class of nitride semiconductors, characterized by its wide-gap insulating electronic profile. Its structural composition suggests it functions as a specialized dielectric or precursor material within semiconductor manufacturing environments.

As a near-hull compound, it is considered a viable candidate for experimental synthesis. Its unique arrangement of hydrogen, nitrogen, and silicon atoms positions it as an intriguing subject for research into novel thin-film insulators and passivating layers.

At a glance

Key Properties

Cross-validated computational properties for H18N2Si6, aggregated across 3 databases.

Band Gap

4.18 eV
Range across DFT structures

Energy Above Hull

0.022 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

3
3 databases, 1 space group
Uses

Applications

Where H18N2Si6 is used.

Semiconductor passivating layersDielectric thin filmsPrecursor for nitride-based materials
Reference

Frequently Asked Questions

Common questions about H18N2Si6, answered from cross-validated data.

What is H18N2Si6?

H18N2Si6 is a hydrogenated silicon nitride semiconductor that acts as a wide-gap insulator with potential for specialized electronic device applications.

More questions
What is H18N2Si6 used for?
H18N2Si6 is used in semiconductor passivating layers, dielectric thin films, and precursor for nitride-based materials.
What is the band gap of H18N2Si6?
H18N2Si6 has a DFT-computed band gap of 4.18 eV across 3 reported structures.
Is H18N2Si6 a metal, semiconductor, or insulator?
With a wide band gap up to 4.18 eV it is an insulator / wide-band-gap material.
Is H18N2Si6 thermodynamically stable?
H18N2Si6 has a lowest energy above hull of 0.022 eV/atom (near hull (likely stable)).
How many polymorphs of H18N2Si6 are known?
3 structures of H18N2Si6 are reported across 3 databases, spanning 1 distinct space group.
What elements does H18N2Si6 contain?
H18N2Si6 contains H, N, and Si (3 elements).
Where does the data for H18N2Si6 come from?
H18N2Si6 data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the nitride semiconductors class.

Unlike well-established industrial semiconductors such as GaN or AlN, which are widely utilized for their optoelectronic properties, H18N2Si6 represents a more complex, hydrogen-rich structural variant within the broader nitride family. While binary nitrides like BN provide high thermal stability, this compound offers a distinct chemical architecture that may provide unique surface-termination or insulating characteristics not found in simpler systems like InN.

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Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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