Ga6N10Sr6
Ga6N10Sr6 is a thermodynamically stable ternary nitride semiconductor composed of gallium, nitrogen, and strontium.
About Ga6N10Sr6
Ga6N10Sr6 is a complex nitride semiconductor that occupies a stable position on the convex hull. As a member of the nitride family, it exhibits semiconducting behavior, making it a subject of interest for researchers investigating the interplay between gallium, nitrogen, and strontium in solid-state systems. Its structural configuration suggests a robust atomic arrangement that maintains stability under standard conditions. The material serves as a unique entry in the database, offering insights into the diverse chemical space of ternary nitrides. Its potential utility is primarily found in fundamental materials research and the exploration of new semiconducting phases for advanced electronic applications.
Key Properties
Cross-validated computational properties for Ga6N10Sr6, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ga6N10Sr6, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 1.36 | 0.0000 | -12.177 | 5.31 |
| No. 0 | unknown | — | — | — | 2.66 |
| P-1 (No. 2) | — | — | — | — | — |
Applications
Where Ga6N10Sr6 is used.
Frequently Asked Questions
Common questions about Ga6N10Sr6, answered from cross-validated data.
What is Ga6N10Sr6?
Ga6N10Sr6 is a thermodynamically stable ternary nitride semiconductor composed of gallium, nitrogen, and strontium.
What is Ga6N10Sr6 used for?
What is the band gap of Ga6N10Sr6?
Is Ga6N10Sr6 a metal, semiconductor, or insulator?
Is Ga6N10Sr6 thermodynamically stable?
What is the crystal structure of Ga6N10Sr6?
What is the density of Ga6N10Sr6?
How many polymorphs of Ga6N10Sr6 are known?
What elements does Ga6N10Sr6 contain?
Where does the data for Ga6N10Sr6 come from?
How It Compares
Within the nitride semiconductors class.
Unlike the binary nitrides such as GaN or AlN, which are widely utilized in optoelectronics due to their well-characterized band structures, Ga6N10Sr6 represents a more intricate ternary composition. While GaN is a foundational material for high-frequency electronics, Ga6N10Sr6 provides a distinct structural complexity that differentiates it from simpler compounds like BN or InN, highlighting the structural flexibility achievable when incorporating alkaline earth metals like strontium into the nitride lattice.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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