Ga4La8N12

Ga4La8N12 is a thermodynamically stable ternary nitride semiconductor composed of gallium, lanthanum, and nitrogen.

Crystal structure of Ga4La8N12
Ground-state structure · Materials Project
Overview

About Ga4La8N12

Ga4La8N12 is a complex ternary nitride semiconductor that occupies a stable position on the convex hull. Its unique composition of gallium, lanthanum, and nitrogen distinguishes it from simpler binary nitrides, offering a distinct electronic profile suitable for specialized semiconductor research.

As a thermodynamically robust material, it represents an interesting candidate for structural investigations within the broader nitride family. Its existence across multiple databases highlights its significance as a well-defined phase in the study of complex metal-nitride systems.

At a glance

Key Properties

Cross-validated computational properties for Ga4La8N12, aggregated across 3 databases.

Band Gap

1.80 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

3
3 databases, 1 space group
Uses

Applications

Where Ga4La8N12 is used.

Semiconductor researchMaterials science explorationAdvanced electronic material design
Reference

Frequently Asked Questions

Common questions about Ga4La8N12, answered from cross-validated data.

What is Ga4La8N12?

Ga4La8N12 is a thermodynamically stable ternary nitride semiconductor composed of gallium, lanthanum, and nitrogen.

More questions
What is Ga4La8N12 used for?
Ga4La8N12 is used in semiconductor research, materials science exploration, and advanced electronic material design.
What is the band gap of Ga4La8N12?
Ga4La8N12 has a DFT-computed band gap of 1.80 eV across 3 reported structures.
Is Ga4La8N12 a metal, semiconductor, or insulator?
With a band gap up to 1.80 eV it is a semiconductor.
Is Ga4La8N12 thermodynamically stable?
Yes — Ga4La8N12 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Ga4La8N12 are known?
3 structures of Ga4La8N12 are reported across 3 databases, spanning 1 distinct space group.
What elements does Ga4La8N12 contain?
Ga4La8N12 contains Ga, La, and N (3 elements).
Where does the data for Ga4La8N12 come from?
Ga4La8N12 data is cross-referenced from latticegraph.
Comparison

How It Compares

Within the nitride semiconductors class.

Unlike the widely utilized binary semiconductors such as GaN or AlN, Ga4La8N12 features a more intricate atomic arrangement involving rare-earth elements. While GaN serves as a foundational material for optoelectronics, Ga4La8N12 provides a platform for exploring how heavy metal incorporation influences the semiconducting properties of nitride frameworks.

Explore

Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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