Ga2Mo2N6

Ga2Mo2N6 has a DFT band gap of 1.09 eV across 2 reported structures in 1 space group. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ga2Mo2N6, aggregated across 2 databases.

Band Gap

1.09 eV
Range across DFT structures

Energy Above Hull

0.306 eV/atom
Best (lowest) across sources

Stability

Above hull
1 DFT source

Structures

2
2 databases, 1 space group
Reference

Frequently Asked Questions

Common questions about Ga2Mo2N6, answered from cross-validated data.

What is the band gap of Ga2Mo2N6?

Ga2Mo2N6 has a DFT-computed band gap of 1.09 eV across 2 reported structures.

More questions
Is Ga2Mo2N6 a metal, semiconductor, or insulator?
With a band gap up to 1.09 eV it is a semiconductor.
Is Ga2Mo2N6 thermodynamically stable?
Ga2Mo2N6 has a lowest energy above hull of 0.306 eV/atom (above hull).
How many polymorphs of Ga2Mo2N6 are known?
2 structures of Ga2Mo2N6 are reported across 2 databases, spanning 1 distinct space group.
What elements does Ga2Mo2N6 contain?
Ga2Mo2N6 contains Ga, Mo, and N (3 elements).
Where does the data for Ga2Mo2N6 come from?
Ga2Mo2N6 data is cross-referenced from latticegraph.
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Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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