Ga100N100

Ga100N100 has a DFT band gap of 0.02–1.73 eV across 47 reported structures in 7 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ga100N100, aggregated across 3 databases.

Band Gap

0.02–1.73 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

47
3 databases, 7 space groups
Reference

Frequently Asked Questions

Common questions about Ga100N100, answered from cross-validated data.

What is the band gap of Ga100N100?

Ga100N100 has a DFT-computed band gap of 0.02–1.73 eV across 47 reported structures.

More questions
Is Ga100N100 a metal, semiconductor, or insulator?
With a band gap up to 1.73 eV it is a semiconductor.
Is Ga100N100 thermodynamically stable?
Yes — Ga100N100 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Ga100N100 are known?
47 structures of Ga100N100 are reported across 3 databases, spanning 7 distinct space groups.
What elements does Ga100N100 contain?
Ga100N100 contains Ga and N (2 elements).
Where does the data for Ga100N100 come from?
Ga100N100 data is cross-referenced from latticegraph.
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Related Compounds

Other III-V Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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