AlGaN2
AlGaN2 is a semiconducting nitride compound that exists near the thermodynamic stability threshold and is being explored for its potential in advanced semiconductor technologies.
About AlGaN2
AlGaN2 is a complex nitride semiconductor that sits near the thermodynamic stability limit, suggesting it is a viable candidate for experimental synthesis. Its electronic structure positions it as a promising material for high-performance semiconductor applications where precise band engineering is required.
As a member of the nitride semiconductor family, this compound benefits from the structural versatility inherent in group-III nitrides. Its existence across multiple reported structural configurations highlights its potential for integration into next-generation electronic and photonic systems.
Key Properties
Cross-validated computational properties for AlGaN2, aggregated across 4 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of AlGaN2. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for AlGaN2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P3m1 (No. 156) | trigonal | 2.78 | 0.0011 | -1.112 | — |
| P3m1 (No. 156) | trigonal | 2.72 | 0.0072 | -10.276 | 4.74 |
| — | — | 3.08 | 0.0094 | -1.036 | — |
| P-4m2 (No. 115) | tetragonal | 2.67 | 0.0146 | -10.268 | 4.75 |
| P-4m2 (No. 115) | tetragonal | 2.95 | 0.0151 | -1.098 | — |
| P2/m (No. 10) | monoclinic | — | — | — | 4.63 |
| P2/m (No. 10) | monoclinic | — | — | — | 4.29 |
| P2/m (No. 10) | monoclinic | — | — | — | 3.95 |
| P-4m2 (No. 115) | tetragonal | — | — | — | 4.86 |
| P-4m2 (No. 115) | tetragonal | — | — | — | 4.63 |
| P-4m2 (No. 115) | tetragonal | — | — | — | 4.74 |
| P3m1 (No. 156) | trigonal | — | — | — | 4.63 |
Applications
Where AlGaN2 is used.
Frequently Asked Questions
Common questions about AlGaN2, answered from cross-validated data.
What is AlGaN2?
AlGaN2 is a semiconducting nitride compound that exists near the thermodynamic stability threshold and is being explored for its potential in advanced semiconductor technologies.
What is AlGaN2 used for?
What is the band gap of AlGaN2?
Is AlGaN2 a metal, semiconductor, or insulator?
Is AlGaN2 thermodynamically stable?
What is the crystal structure of AlGaN2?
What is the density of AlGaN2?
How many polymorphs of AlGaN2 are known?
What elements does AlGaN2 contain?
Where does the data for AlGaN2 come from?
How It Compares
Within the nitride semiconductors class.
Within the diverse group of nitride semiconductors, AlGaN2 occupies a distinct niche between binary compounds like AlN and GaN. While those binary members are well-established industry standards, AlGaN2 represents a more complex, ternary-like arrangement that offers a different structural landscape compared to simpler systems like BN or InN.
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
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