AlGaN2

AlGaN2 is a semiconducting nitride compound that exists near the thermodynamic stability threshold and is being explored for its potential in advanced semiconductor technologies.

Crystal structure of AlGaN2 (trigonal, P3m1 (No. 156))
Ground-state structure · Materials Project
Overview

About AlGaN2

AlGaN2 is a complex nitride semiconductor that sits near the thermodynamic stability limit, suggesting it is a viable candidate for experimental synthesis. Its electronic structure positions it as a promising material for high-performance semiconductor applications where precise band engineering is required.

As a member of the nitride semiconductor family, this compound benefits from the structural versatility inherent in group-III nitrides. Its existence across multiple reported structural configurations highlights its potential for integration into next-generation electronic and photonic systems.

At a glance

Key Properties

Cross-validated computational properties for AlGaN2, aggregated across 3 databases.

Band Gap

2.66–2.72 eV
Range across DFT structures

Energy Above Hull

0.007 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
2 DFT sources

Structures

13
3 databases, 3 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for AlGaN2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P3m1 (No. 156)trigonal2.720.0072-10.2764.74
P-4m2 (No. 115)tetragonal2.660.0146-10.2684.75
P-4m2 (No. 115)Tetragonal4.63
P-4m2 (No. 115)Tetragonal4.86
P-4m2 (No. 115)Tetragonal4.74
P3m1 (No. 156)Trigonal4.85
P3m1 (No. 156)Trigonal4.63
P3m1 (No. 156)
P-4m2 (No. 115)
P2/m (No. 10)Monoclinic3.95
P3m1 (No. 156)Trigonal4.74
P2/m (No. 10)Monoclinic4.63
Uses

Applications

Where AlGaN2 is used.

Optoelectronic device researchPower electronicsSemiconductor material development
Reference

Frequently Asked Questions

Common questions about AlGaN2, answered from cross-validated data.

What is AlGaN2?

AlGaN2 is a semiconducting nitride compound that exists near the thermodynamic stability threshold and is being explored for its potential in advanced semiconductor technologies.

More questions
What is AlGaN2 used for?
AlGaN2 is used in optoelectronic device research, power electronics, and semiconductor material development.
What is the band gap of AlGaN2?
AlGaN2 has a DFT-computed band gap of 2.66–2.72 eV across 13 reported structures.
Is AlGaN2 a metal, semiconductor, or insulator?
With a band gap up to 2.72 eV it is a semiconductor.
Is AlGaN2 thermodynamically stable?
AlGaN2 has a lowest energy above hull of 0.007 eV/atom (near hull (likely stable)).
What is the crystal structure of AlGaN2?
The lowest-energy reported polymorph of AlGaN2 is trigonal symmetry, space group P3m1 (No. 156).
What is the density of AlGaN2?
The computed density of the ground-state structure of AlGaN2 is 4.74 g/cm³.
How many polymorphs of AlGaN2 are known?
13 structures of AlGaN2 are reported across 3 databases, spanning 3 distinct space groups.
What elements does AlGaN2 contain?
AlGaN2 contains Al, Ga, and N (3 elements).
Where does the data for AlGaN2 come from?
AlGaN2 data is cross-referenced from materials_project, mpaloe, jarvis.
Comparison

How It Compares

Within the nitride semiconductors class.

Within the diverse group of nitride semiconductors, AlGaN2 occupies a distinct niche between binary compounds like AlN and GaN. While those binary members are well-established industry standards, AlGaN2 represents a more complex, ternary-like arrangement that offers a different structural landscape compared to simpler systems like BN or InN.

Explore

Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • mpaloe — Data from mpaloe.
  • jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).

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