AlCN

AlCN is an unstable ternary nitride semiconductor candidate characterized by a wide-band-gap electronic structure.

Overview

About AlCN

AlCN is an unconventional member of the nitride semiconductor family, characterized by its wide-band-gap electronic structure. Unlike conventional binary nitrides, this ternary compound incorporates carbon, placing it in a unique position for exploring specialized semiconducting behaviors. Its electronic profile suggests insulating characteristics, making it a subject of interest for theoretical investigations into high-performance electronic materials.

Due to its position above the thermodynamic hull, AlCN is considered a metastable or unstable phase under standard conditions. While it has been documented across multiple structural databases, its synthesis remains a significant challenge compared to more robust, thermodynamically stable nitrides. Research into this compound focuses on understanding the structural configurations that might stabilize such complex ternary systems.

At a glance

Key Properties

Cross-validated computational properties for AlCN, aggregated across 3 databases.

Band Gap

5.11 eV
Range across DFT structures

Energy Above Hull

0.342 eV/atom
Best (lowest) across sources

Stability

Above hull
2 DFT sources

Structures

11
3 databases, 8 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for AlCN, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R3m (No. 160)trigonal5.110.3416-8.2021.44
P-421m (No. 113)tetragonal5.060.3435-8.2001.46
P-1 (No. 2)Triclinic2.93
P-1 (No. 2)Triclinic2.73
P63/mmc (No. 194)Hexagonal3.99
C2 (No. 5)Monoclinic3.33
P-1 (No. 2)Triclinic2.69
P21 (No. 4)Monoclinic2.95
Pmm2 (No. 25)
P-6m2 (No. 187)
R3m (No. 160)
Uses

Applications

Where AlCN is used.

Theoretical semiconductor researchExploratory material scienceHigh-performance electronic material modeling
Reference

Frequently Asked Questions

Common questions about AlCN, answered from cross-validated data.

What is AlCN?

AlCN is an unstable ternary nitride semiconductor candidate characterized by a wide-band-gap electronic structure.

More questions
What is AlCN used for?
AlCN is used in theoretical semiconductor research, exploratory material science, and high-performance electronic material modeling.
What is the band gap of AlCN?
AlCN has a DFT-computed band gap of 5.11 eV across 11 reported structures.
Is AlCN a metal, semiconductor, or insulator?
With a wide band gap up to 5.11 eV it is an insulator / wide-band-gap material.
Is AlCN thermodynamically stable?
AlCN has a lowest energy above hull of 0.342 eV/atom (above hull).
What is the crystal structure of AlCN?
The lowest-energy reported polymorph of AlCN is trigonal symmetry, space group R3m (No. 160).
What is the density of AlCN?
The computed density of the ground-state structure of AlCN is 1.44 g/cm³.
How many polymorphs of AlCN are known?
11 structures of AlCN are reported across 3 databases, spanning 8 distinct space groups.
What elements does AlCN contain?
AlCN contains Al, C, and N (3 elements).
Where does the data for AlCN come from?
AlCN data is cross-referenced from materials_project, mpaloe, jarvis.
Comparison

How It Compares

Within the nitride semiconductors class.

Unlike the highly stable and widely utilized AlN or GaN, which serve as the industry standard for optoelectronics and power devices, AlCN lacks the thermodynamic robustness required for conventional manufacturing. While BN and InN offer well-defined electronic properties for specific semiconductor applications, AlCN remains an exploratory material that has yet to demonstrate the practical viability seen in its more established binary siblings.

Explore

Related Compounds

Other Nitride Semiconductors in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • mpaloe — Data from mpaloe.
  • jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).

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