Al8N8

Al8N8 has a DFT band gap of 3.27–4.42 eV across 11 reported structures in 5 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Al8N8, aggregated across 3 databases.

Band Gap

3.27–4.42 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

11
3 databases, 5 space groups
Reference

Frequently Asked Questions

Common questions about Al8N8, answered from cross-validated data.

What is the band gap of Al8N8?

Al8N8 has a DFT-computed band gap of 3.27–4.42 eV across 11 reported structures.

More questions
Is Al8N8 a metal, semiconductor, or insulator?
With a wide band gap up to 4.42 eV it is an insulator / wide-band-gap material.
Is Al8N8 thermodynamically stable?
Yes — Al8N8 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Al8N8 are known?
11 structures of Al8N8 are reported across 3 databases, spanning 5 distinct space groups.
What elements does Al8N8 contain?
Al8N8 contains Al and N (2 elements).
Where does the data for Al8N8 come from?
Al8N8 data is cross-referenced from latticegraph.
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Related Compounds

Other III-V Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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