Al3N3

Al3N3 has a DFT band gap of 3.27–4.42 eV across 10 reported structures in 6 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Al3N3, aggregated across 3 databases.

Band Gap

3.27–4.42 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

10
3 databases, 6 space groups
Reference

Frequently Asked Questions

Common questions about Al3N3, answered from cross-validated data.

What is the band gap of Al3N3?

Al3N3 has a DFT-computed band gap of 3.27–4.42 eV across 10 reported structures.

More questions
Is Al3N3 a metal, semiconductor, or insulator?
With a wide band gap up to 4.42 eV it is an insulator / wide-band-gap material.
Is Al3N3 thermodynamically stable?
Yes — Al3N3 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Al3N3 are known?
10 structures of Al3N3 are reported across 3 databases, spanning 6 distinct space groups.
What elements does Al3N3 contain?
Al3N3 contains Al and N (2 elements).
Where does the data for Al3N3 come from?
Al3N3 data is cross-referenced from latticegraph.
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Related Compounds

Other III-V Semiconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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