Al3GaN4
This compound is a ternary nitride semiconductor material composed of aluminum, gallium, and nitrogen. It is primarily investigated for its potential utility in optoelectronic devices and high-frequency electronics due to its structural relationship with other wide-bandgap semiconductor systems.
Key Properties
Cross-validated computational properties for Al3GaN4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Al3GaN4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pm (No. 6) | monoclinic | 3.41 | 0.0020 | -9.945 | 4.03 |
| P-43m (No. 215) | cubic | 3.35 | 0.0173 | -9.929 | 4.03 |
| P-43m (No. 215) | Cubic | — | — | — | 3.94 |
| P-43m (No. 215) | Cubic | — | — | — | 4.11 |
| Pm (No. 6) | Monoclinic | — | — | — | 4.03 |
| Pm (No. 6) | Monoclinic | — | — | — | 4.11 |
| Pm (No. 6) | Monoclinic | — | — | — | 3.94 |
| P-43m (No. 215) | Cubic | — | — | — | 4.03 |
| Pm (No. 6) | — | — | — | — | — |
| P-43m (No. 215) | — | — | — | — | — |
Applications
Where Al3GaN4 is used.
Frequently Asked Questions
Common questions about Al3GaN4, answered from cross-validated data.
What is Al3GaN4?
This compound is a ternary nitride semiconductor material composed of aluminum, gallium, and nitrogen. It is primarily investigated for its potential utility in optoelectronic devices and high-frequency electronics due to its structural relationship with other wide-bandgap semiconductor systems.
What is Al3GaN4 used for?
What is the band gap of Al3GaN4?
Is Al3GaN4 a metal, semiconductor, or insulator?
Is Al3GaN4 thermodynamically stable?
What is the crystal structure of Al3GaN4?
What is the density of Al3GaN4?
How many polymorphs of Al3GaN4 are known?
What elements does Al3GaN4 contain?
Where does the data for Al3GaN4 come from?
Related Compounds
Other Nitride Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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