Si8

Si8 has a DFT band gap of 0.03–1.52 eV across 83 reported structures in 24 space groups. Cross-validated across 5 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Si8, aggregated across 5 databases.

Band Gap

0.03–1.52 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
3 DFT sources

Structures

83
5 databases, 24 space groups
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting Si8.

Sol Gel
Procedure available · ceder_sol_gel
Sol Gel
Procedure available · ceder_sol_gel
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about Si8, answered from cross-validated data.

What is the band gap of Si8?

Si8 has a DFT-computed band gap of 0.03–1.52 eV across 83 reported structures.

More questions
Is Si8 a metal, semiconductor, or insulator?
With a band gap up to 1.52 eV it is a semiconductor.
Is Si8 thermodynamically stable?
Yes — Si8 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Si8 are known?
83 structures of Si8 are reported across 5 databases, spanning 24 distinct space groups.
How is Si8 synthesized?
Literature-reported routes for Si8 include sol gel, solid state (10 procedures documented).
What elements does Si8 contain?
Si8 contains Si (1 element).
Where does the data for Si8 come from?
Si8 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Silicon Anode Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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