C3Si3

C3Si3 has a DFT band gap of 1.37–2.30 eV across 61 reported structures in 14 space groups. Cross-validated across 5 computational databases.

At a glance

Key Properties

Cross-validated computational properties for C3Si3, aggregated across 5 databases.

Band Gap

1.37–2.30 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
3 DFT sources

Structures

61
5 databases, 14 space groups
Reference

Frequently Asked Questions

Common questions about C3Si3, answered from cross-validated data.

What is the band gap of C3Si3?

C3Si3 has a DFT-computed band gap of 1.37–2.30 eV across 61 reported structures.

More questions
Is C3Si3 a metal, semiconductor, or insulator?
With a band gap up to 2.30 eV it is a semiconductor.
Is C3Si3 thermodynamically stable?
Yes — C3Si3 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of C3Si3 are known?
61 structures of C3Si3 are reported across 5 databases, spanning 14 distinct space groups.
What elements does C3Si3 contain?
C3Si3 contains C and Si (2 elements).
Where does the data for C3Si3 come from?
C3Si3 data is cross-referenced from latticegraph.
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Related Compounds

Other Silicon Anode Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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