Sb2TeSe2

Sb2TeSe2 is a stable, semiconducting chalcogenide material used in the development of advanced phase-change memory devices.

Crystal structure of Sb2TeSe2 (trigonal, R3m (No. 160))
Ground-state structure · Materials Project
Overview

About Sb2TeSe2

Sb2TeSe2 is a semiconducting material belonging to the phase-change memory family. As a thermodynamically stable compound residing on the convex hull, it exhibits robust structural integrity, making it a reliable candidate for electronic switching applications where phase stability is paramount. The material is characterized by a well-documented structural profile, supported by multiple entries across major materials databases. Its ability to transition between states allows it to function effectively in non-volatile memory architectures, where it leverages its semiconducting nature to facilitate rapid and reversible state changes. This makes it a significant subject of study for engineers developing high-density, low-power storage solutions.

At a glance

Key Properties

Cross-validated computational properties for Sb2TeSe2, aggregated across 3 databases.

Band Gap

0.30–0.65 eV
Range across DFT structures · ground state: narrow gap

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

Stable
3 DFT sources

Structures

10
3 databases, 2 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of Sb2TeSe2. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

0.71 / 1.00
Trust tier: medium

Hull Spread

0.073 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, oqmd

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for Sb2TeSe2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R3m (No. 160)trigonal0.400.0000-0.236—
——0.580.0034-0.226—
——0.650.0344-0.195—
R-3m (No. 166)trigonal0.300.0382-0.198—
R3m (No. 160)trigonal0.490.0731-4.0925.88
R-3m (No. 166)trigonal0.550.1098-4.0565.73
R3m (No. 160)trigonal———6.10
R3m (No. 160)trigonal———5.76
R3m (No. 160)trigonal———5.92
R3m (No. 160)trigonal———5.85
R-3m (No. 166)trigonal———5.89
R-3m (No. 166)trigonal———5.73
Uses

Applications

Where Sb2TeSe2 is used.

Phase-change memory devicesNon-volatile data storageElectronic switching components
Reference

Frequently Asked Questions

Common questions about Sb2TeSe2, answered from cross-validated data.

What is Sb2TeSe2?

Sb2TeSe2 is a stable, semiconducting chalcogenide material used in the development of advanced phase-change memory devices.

More questions
What is Sb2TeSe2 used for?
Sb2TeSe2 is used in phase-change memory devices, non-volatile data storage, and electronic switching components.
What is the band gap of Sb2TeSe2?
Sb2TeSe2 has a DFT-computed band gap of 0.30–0.65 eV across 10 reported structures. Standard DFT underestimates band gaps, so the measured gap is typically larger.
Is Sb2TeSe2 a metal, semiconductor, or insulator?
DFT predicts a band gap of up to 0.65 eV (a semiconductor). Measured gaps are typically larger.
Is Sb2TeSe2 thermodynamically stable?
Yes — Sb2TeSe2 sits on the convex hull (energy above hull 0 eV/atom), i.e. stable.
What is the crystal structure of Sb2TeSe2?
The reference structure of Sb2TeSe2 is trigonal symmetry, space group R3m (No. 160).
How many polymorphs of Sb2TeSe2 are known?
10 structures of Sb2TeSe2 are reported across 3 databases, spanning 2 distinct space groups.
What elements does Sb2TeSe2 contain?
Sb2TeSe2 contains Sb, Se, and Te (3 elements).
Where does the data for Sb2TeSe2 come from?
Sb2TeSe2 data is cross-referenced from jarvis, oqmd, materials_project, cod, mpaloe.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the broader class of phase-change materials, Sb2TeSe2 occupies a unique niche compared to industry standards like Ge2Sb2Te5 or Sb2Te3. While many of its siblings are optimized for specific switching speeds or thermal thresholds, Sb2TeSe2 offers a distinct combination of stability and electronic properties that allows for tailored performance in memory devices. It serves as a sophisticated alternative to simpler binary systems like AgTe or GeTe, providing a more complex chalcogenide framework that can be fine-tuned for specific device requirements.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
  • oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
  • materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
  • cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
  • mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.

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