BiSbTe2
BiSbTe2 is a semiconducting phase-change material that shows potential for use in advanced, energy-efficient memory storage technologies.
About BiSbTe2
BiSbTe2 is a semiconducting compound belonging to the class of phase-change memory materials. Its electronic structure and structural flexibility make it an intriguing candidate for non-volatile memory applications where rapid, reversible transitions between amorphous and crystalline states are required. Being identified as a near-hull material, it is considered highly synthesizable and stable for experimental investigation. The material benefits from a rich structural history, with multiple reported configurations across various databases, highlighting its versatility in solid-state research.
Key Properties
Cross-validated computational properties for BiSbTe2, aggregated across 5 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Cross-Source DFT Agreement
How well independent DFT databases agree on the thermodynamics of BiSbTe2. Tight agreement means computed properties can be trusted without re-running calculations.
Agreement ScoreA normalized confidence score summarizing how closely independent DFT databases agree. Higher scores mean tighter cross-source agreement.
Hull SpreadDifference between the highest and lowest energy-above-hull values reported by comparable sources. Smaller spread means less thermodynamic disagreement.
Sources ComparedNumber and names of computational sources with comparable entries for this formula.
Space Group ConsensusWhether independent sources predict the same crystal symmetry for the lowest-energy structure.
Reported Structures
Lowest-energy structures reported for BiSbTe2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P3m1 (No. 156) | trigonal | 0.14 | 0.0460 | -0.131 | — |
| P3m1 (No. 156) | trigonal | 0.48 | 0.0521 | -3.913 | 6.99 |
| — | — | 0.00 | 0.2957 | 0.121 | — |
| P3m1 (No. 156) | trigonal | — | — | — | 6.99 |
| P3m1 (No. 156) | trigonal | — | — | — | 7.07 |
| P-3m1 (No. 164) | trigonal | — | — | — | 7.51 |
| P3m1 (No. 156) | trigonal | — | — | — | 7.09 |
Applications
Where BiSbTe2 is used.
Frequently Asked Questions
Common questions about BiSbTe2, answered from cross-validated data.
What is BiSbTe2?
BiSbTe2 is a semiconducting phase-change material that shows potential for use in advanced, energy-efficient memory storage technologies.
What is BiSbTe2 used for?
What is the band gap of BiSbTe2?
Is BiSbTe2 a metal, semiconductor, or insulator?
Is BiSbTe2 thermodynamically stable?
What is the crystal structure of BiSbTe2?
What is the density of BiSbTe2?
How many polymorphs of BiSbTe2 are known?
What elements does BiSbTe2 contain?
Where does the data for BiSbTe2 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse family of phase-change materials, BiSbTe2 occupies a unique niche alongside established compounds like Ge2Sb2Te5 and Sb2Te3. While Ge2Sb2Te5 remains the industry standard for its rapid switching kinetics, BiSbTe2 offers a distinct elemental composition that allows researchers to tune thermal and electrical properties, potentially overcoming limitations in power consumption or endurance found in simpler binary tellurides.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- jarvis — Data from JARVIS (jarvis.nist.gov), NIST. Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020). (LicenseRef-US-Gov-PD)
- materials_project — Data from the Materials Project (materialsproject.org). Cite: Jain et al., APL Materials 1, 011002 (2013). (CC-BY-4.0)
- oqmd — Data from the OQMD (oqmd.org). Cite: Saal et al., JOM 65, 1501 (2013); Kirklin et al., npj Comp. Mater. 1, 15010 (2015). (CC-BY-4.0)
- mpaloe — Data from MP-ALOE. Cite: Kuner et al., npj Comput. Mater. (2025), doi:10.1038/s41524-025-01834-9.
- cod — Data from the Crystallography Open Database (crystallography.net/cod/). Cite: Grazulis et al., J. Appl. Cryst. 42, 726 (2009). (CC0-1.0)
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