N16Si12

N16Si12 has a DFT band gap of 0.18–4.65 eV across 36 reported structures in 7 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for N16Si12, aggregated across 2 databases.

Band Gap

0.18–4.65 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

36
2 databases, 7 space groups
Reference

Frequently Asked Questions

Common questions about N16Si12, answered from cross-validated data.

What is the band gap of N16Si12?

N16Si12 has a DFT-computed band gap of 0.18–4.65 eV across 36 reported structures.

More questions
Is N16Si12 a metal, semiconductor, or insulator?
With a wide band gap up to 4.65 eV it is an insulator / wide-band-gap material.
Is N16Si12 thermodynamically stable?
Yes — N16Si12 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of N16Si12 are known?
36 structures of N16Si12 are reported across 2 databases, spanning 7 distinct space groups.
What elements does N16Si12 contain?
N16Si12 contains N and Si (2 elements).
Where does the data for N16Si12 come from?
N16Si12 data is cross-referenced from latticegraph.
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Related Compounds

Other Silicon Anode Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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