InSb3
Indium triantimonide is a semiconducting intermetallic compound composed of indium and antimony. It is primarily studied for its potential utility in advanced electronic and optoelectronic devices due to its specific semiconducting properties.
Overview
Key Properties
Cross-validated computational properties for InSb3, aggregated across 5 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Metallic / not reported
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.149 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
Above hull
4 DFT sources
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
25
5 databases, 5 space groups
Crystallography
Reported Structures
Lowest-energy structures reported for InSb3, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Fm-3m (No. 225) | cubic | 0.00 | 0.1492 | -24.894 | 7.30 |
| Pm-3m (No. 221) | cubic | 0.00 | 0.1502 | -24.893 | 7.18 |
| P-1 (No. 2) | Triclinic | — | — | — | 5.07 |
| — | — | — | — | — | 7.30 |
| Fm-3m (No. 225) | Cubic | — | — | — | 7.38 |
| Fm-3m (No. 225) | Cubic | — | — | — | 7.30 |
| — | — | — | — | — | 7.35 |
| C2/m (No. 12) | Monoclinic | — | — | — | 5.31 |
| C2/m (No. 12) | Monoclinic | — | — | — | 5.62 |
| P-1 (No. 2) | Triclinic | — | — | — | 5.93 |
| Fm-3m (No. 225) | — | — | — | — | — |
| — | — | — | — | — | 6.93 |
Uses
Applications
Where InSb3 is used.
Semiconductor researchInfrared detector developmentThermoelectric material studies
Reference
Frequently Asked Questions
Common questions about InSb3, answered from cross-validated data.
What is InSb3?
Indium triantimonide is a semiconducting intermetallic compound composed of indium and antimony. It is primarily studied for its potential utility in advanced electronic and optoelectronic devices due to its specific semiconducting properties.
More questions
What is InSb3 used for?
InSb3 is used in semiconductor research, infrared detector development, and thermoelectric material studies.
What is the band gap of InSb3?
InSb3 is computed to be metallic (no band gap) in the reported DFT structures.
Is InSb3 a metal, semiconductor, or insulator?
Computed band structures report no gap, so it is metallic.
Is InSb3 thermodynamically stable?
InSb3 has a lowest energy above hull of 0.149 eV/atom (above hull).
What is the crystal structure of InSb3?
The lowest-energy reported polymorph of InSb3 is cubic symmetry, space group Fm-3m (No. 225).
What is the density of InSb3?
The computed density of the ground-state structure of InSb3 is 7.30 g/cm³.
How many polymorphs of InSb3 are known?
25 structures of InSb3 are reported across 5 databases, spanning 5 distinct space groups.
What elements does InSb3 contain?
InSb3 contains In and Sb (2 elements).
Where does the data for InSb3 come from?
InSb3 data is cross-referenced from materials_project, mpaloe, omat24, nomad, jarvis.
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Related Compounds
Other III-V Semiconductors in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- mpaloe — Data from mpaloe.
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
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